BFP 450 E6433 Infineon Technologies, BFP 450 E6433 Datasheet - Page 8

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BFP 450 E6433

Manufacturer Part Number
BFP 450 E6433
Description
TRANSISTOR NPN RF 4.5V SOT-343
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFP 450 E6433

Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
5V
Frequency - Transition
24GHz
Noise Figure (db Typ @ F)
1.25dB @ 1.8GHz
Gain
15.5dB
Power - Max
450mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 50mA, 4V
Current - Collector (ic) (max)
100mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
60
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
24000 MHz
Collector- Emitter Voltage Vceo Max
4.5 V
Emitter- Base Voltage Vebo
1.5 V
Continuous Collector Current
0.1 A
Power Dissipation
450 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000011040
2
Table 1
Parameter
Collector emitter voltage
Collector emitter voltage
Collector base voltage
Emitter base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
1) T
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Data Sheet
S
is the soldering point temperature. T
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Maximum Ratings
Maximum Ratings
1)
Symbol
V
V
V
V
I
I
P
T
T
C
B
J
Stg
CEO
CES
CBO
EBO
tot
S
measured on the emitter lead at the soldering point of the pcb.
Values
Min.
-65
8
150
Max.
4.5
4.1
15
15
1.5
170
10
500
150
Unit
V
V
V
V
V
mA
mA
mW
°C
°C
Note / Test Condition
Open base
T
T
Emitter / base shortened
Open emitter
Open collector
T
Revision 1.0, 2010-10-22
A
A
S
= 25 °C
= -55 °C
≤ 90 °C
Maximum Ratings
BFP450

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