BFP 450 E6433 Infineon Technologies, BFP 450 E6433 Datasheet - Page 21

• Manufacturer Part Number: BFP 450 E6433
• Description: TRANSISTOR NPN RF 4.5V SOT-343
• Manufacturer: Infineon Technologies

Specifications of BFP 450 E6433

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 24GHz
• Noise Figure (db Typ @ F): 1.25dB @ 1.8GHz
• Gain: 15.5dB
• Power - Max: 450mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 50mA, 4V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 24000 MHz
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 450 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000011040

Figure 14
Figure 15
Data Sheet
Input Matching
Source Impedance for Minimum Noise Figure
S
−0.1
−0.1
0.1
11
0
0.1
0
−0.2
−0.2
0.2
0.2
=
−0.3
−0.3
0.3
0.3
0.9GHz
f
0.1
0.1
1.9GHz
2.4GHz
−0.4
(
−0.4
0.4
0.4
f
1
0.45GHz
0.2 0.3 0.4 0.5
0.2 0.3 0.4 0.5
),
−0.5
−0.5
2
0.5
0.5
V
3
CE
= 3 V,
4
5
I
c
I
c
= 90mA
= 50mA
6
I
C
7
1
−1
21
1
−1
= 50 / 90 mA
1
1
1.5
1.5
8
0.03 to 10 GHz
9
2
2
Z
−1.5
−1.5
1.5
1.5
opt
10
3
3
=
4 5
4 5
f
−2
−2
2
2
(
f
),
−3
−3
3
3
V
−4
−4
4
4
90 mA
50 mA
CE
−5
−5
5
5
−10
−10
10
10
= 3 V,
Electrical Characteristics
I
Revision 1.0, 2010-10-22
C
= 50 / 90 mA
BFP450