BFS 483 H6327 Infineon Technologies, BFS 483 H6327 Datasheet - Page 2

• Manufacturer Part Number: BFS 483 H6327
• Description: TRANS RF NPN 12V 65MA SOT363
• Manufacturer: Infineon Technologies

Specifications of BFS 483 H6327

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
• Gain: 19dB
• Power - Max: 450mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 15mA, 8V
• Current - Collector (ic) (max): 65mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain-
I
1
2
C
C
T
For calculation of R
S
CE
CB
EB
S
= 1 mA, I
= 15 mA, V
is measured on the collector lead at the soldering point to the pcb
= 1 V, I
= 20 V, V
= 10 V, I
40 °C
B
C
E
= 0
= 0
CE
BE
= 0
thJA
= 8 V, pulse measured
= 0
please refer to Application Note Thermal Resistance
1)
2)
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
Symbol
V
V
V
V
I
I
P
T
T
T
Symbol
R
CES
CBO
EBO
C
B
FE
CEO
CES
CBO
EBO
tot
j
A
stg
(BR)CEO
thJS
min.
12
70
-
-
-
-65 ... 150
-65 ... 150
Values
Value
Value
450
150
typ.
100
12
20
20
65
245
2
5
-
-
-
-
max.
2007-04-26
100
100
140
1
-
BFS483
Unit
V
µA
nA
µA
-
Unit
V
mA
mW
°C
Unit
K/W