BFP 520F H6327 Infineon Technologies, BFP 520F H6327 Datasheet - Page 2

• Manufacturer Part Number: BFP 520F H6327
• Description: TRANS RF NPN 2.5V 40MA TSFP-4
• Manufacturer: Infineon Technologies

Specifications of BFP 520F H6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3.5V
• Frequency - Transition: 45GHz
• Noise Figure (db Typ @ F): 0.95dB @ 1.8GHz
• Gain: 22.5dB
• Power - Max: 100mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 20mA, 2V
• Current - Collector (ic) (max): 40mA
• Mounting Type: Surface Mount
• Package / Case: TSFP-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Resistance
Parameter
Junction - soldering point
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
1
C
C
For calculation of R
CE
CB
EB
= 1 mA, I
= 20 mA, V
= 1 V, I
= 10 V, V
= 5 V, I
B
C
E
= 0
= 0
= 0
CE
BE
thJA
= 2 V, pulse measured
= 0
please refer to Application Note Thermal Resistance
1)
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
Symbol
R
CES
CBO
EBO
FE
(BR)CEO
thJS
min.
2.5
70
-
-
-
Values
Value
110
typ.
430
3
-
-
-
max.
2007-03-30
200
3.5
170
10
35
BFP520F
Unit
V
µA
mA
µA
-
Unit
K/W