BFP 196W H6327 Infineon Technologies, BFP 196W H6327 Datasheet

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BFP 196W H6327

Manufacturer Part Number
BFP 196W H6327
Description
TRANS RF NPN 12V 150MA SOT343
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFP 196W H6327

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
7.5GHz
Noise Figure (db Typ @ F)
1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Gain
12.5dB ~ 19dB
Power - Max
700mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 50mA, 8V
Current - Collector (ic) (max)
150mA
Mounting Type
Surface Mount
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NPN Silicon RF Transistor*
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP196W
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1
2
3
Pb-containing package may be available upon special request
T S is measured on the collector lead at the soldering point to the pcb
For calculation of R
S
For low noise, low distortion broadband
Power amplifier for DECT and PCN systems
f
Pb-free (RoHS compliant) package
Qualified according AEC Q101
amplifiers in antenna and telecommunications
systems up to 1.5 GHz at collector currents from
20 mA to 80 mA
T
= 7.5 GHz, F = 1.3 dB at 900 MHz
69°C
thJA
Marking
RIs
please refer to Application Note Thermal Resistance
2)
3)
1 = E 2 = C 3 = E 4 = B -
1)
Pin Configuration
1
Symbol
V
V
V
V
I
I
P
T
T
T
Symbol
R
C
B
CEO
CES
CBO
EBO
tot
j
A
stg
thJS
4
-55 ... 150
-55 ... 150
-
3
Value
Value
150
700
150
12
20
20
15
115
2
Package
SOT343
2007-04-20
BFP196W
1
2
Unit
V
mA
mW
°C
Unit
K/W

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BFP 196W H6327 Summary of contents

Page 1

NPN Silicon RF Transistor* For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from Power amplifier for DECT and PCN systems f = 7.5 GHz, ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA 500 MHz C CE Collector-base capacitance MHz ...

Page 4

... MJS = 3 XTI = - All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit: For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www ...

Page 5

Total power dissipation P tot 800 mW 600 500 400 300 200 100 Permissible Pulse Load totmax totDC 0.005 0.01 ...

Page 6

Package Outline +0.1 0.3 -0.05 4x 0.1 M Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT343 0.9 ±0.1 2 ±0.2 0.1 MAX. 1.3 0.1 4 ...

Page 7

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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