BFR 193F H6327 Infineon Technologies, BFR 193F H6327 Datasheet - Page 4

• Manufacturer Part Number: BFR 193F H6327
• Description: TRANS RF NPN 12V 80MA TSFP-3
• Manufacturer: Infineon Technologies

Specifications of BFR 193F H6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
• Gain: 12.5dB
• Power - Max: 580mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 30mA, 8V
• Current - Collector (ic) (max): 80mA
• Mounting Type: Surface Mount
• Package / Case: TSFP-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFR193FH6327XT

IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transistor Chip Data:
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil- und Satellitentechnik (IMST)
Package Equivalent Circuit:
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http://www.infineon.com
B
C
6
0.2738
24
1.935
3.8742
0.94371
1
1.1824
18.828
0.96893
1.1828
1.0037
0
3
L
2
B’
C
fA
V
-
V
-
fF
ps
mA
V
ns
-
-
2
Transistor
Chip
C
E
4
E’
C
L
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
NK =
FC =
1
1
C
3
C’
C
125
0.26949
14.267
0.037925
1.8368
0.76534
0.70276
0.69477
0
0.30002
0
0
0.72063
7
L
3
R
4
1
EHA07536
C
-
-
-
A
-
A
-
V
deg
fF
-
5
C
L
L
L
C
C
C
C
C
C
Valid up to 6GHz
1
2
3
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
1
2
3
4
5
6
=
=
=
=
=
=
=
=
=
0.95341
10.627
1.4289
0.037409
0.91763
0.11938
0.48654
0.8
935.03
0.053563
0.75
1.11
300
0.556
0.657
0.381
43
123
66
10
36
47
2007-03-30
BFR193F
-
fA
-
fA
mA
-
V
fF
-
V
eV
K
nH
nH
nH
fF
fF
fF
fF
fF
fF