BFR 949L3 E6327 Infineon Technologies, BFR 949L3 E6327 Datasheet - Page 3
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BFR 949L3 E6327
Manufacturer Part Number
BFR 949L3 E6327
Description
TRANSISTOR RF NPN 10V TSLP-3
Manufacturer
Infineon Technologies
Datasheet
1.BFR_949L3_E6327.pdf
(5 pages)
Specifications of BFR 949L3 E6327
Package / Case
TSLP-3-1
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
10V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1dB ~ 2.5dB @ 1GHz
Gain
21.5dB
Power - Max
250mW
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 5mA, 6V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
250 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFR949L3E6327XT
SP000013563
SP000013563
Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
Collector-base capacitance
V
emitter grounded
Collector emitter capacitance
V
base grounded
Emitter-base capacitance
V
collector grounded
Noise figure
I
f = 1 GHz
I
f = 1.8 GHz
Power gain
I
Z
Power gain, maximum available
I
Z
Transducer gain
I
f = 1 GHz
I
f = 1.8 GHz
1
C
C
C
C
C
C
C
G ma = | S 21 / S 12 | (k-(k²-1) 1/2 ), G ms = | S 21 / S 12 |
L
L
CB
CE
EB
= 15 mA, V
= 5 mA, V
= 3 mA, V
= 10 mA, V
= 10 mA, V
= 15 mA, V
= 10 mA, V
= Z
= Z
= 0.5 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
Lopt
Lopt
, f = 900 MHz
, f = 1.8 GHz
1)
CE
CE
CE
CE
CE
CE
CE
= 6 V, Z
= 8 V, Z
= 6 V, f = 1 GHz
= 8 V, Z
= 8 V, Z
= 6 V, Z
= 8 V, Z
S
S
BE
BE
S
S
S
S
CB
= Z
= Z
= Z
= Z
= Z
= Z
= 0 ,
= 0 ,
= 0 ,
Sopt
Sopt
Sopt
Sopt
L
L
A
= 50
= 50
1)
,
= 25°C, unless otherwise specified
,
,
,
,
,
3
Symbol
f
C
C
C
F
G
G
|S
T
cb
ce
eb
ms
ma
21e
|
2
min.
14
7
-
-
-
-
-
-
-
-
Values
21.5
0.25
0.15
15.5
typ.
0.7
1.3
17
12
9
1
max.
BFR949L3
0.4
2.5
2007-04-26
-
-
-
-
-
-
-
-
Unit
GHz
pF
dB
-
dB
dB