BFR 949L3 E6327 Infineon Technologies, BFR 949L3 E6327 Datasheet - Page 3

• Manufacturer Part Number: BFR 949L3 E6327
• Description: TRANSISTOR RF NPN 10V TSLP-3
• Manufacturer: Infineon Technologies

Specifications of BFR 949L3 E6327

• Package / Case: TSLP-3-1
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1dB ~ 2.5dB @ 1GHz
• Gain: 21.5dB
• Power - Max: 250mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 6V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 250 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFR949L3E6327XT; SP000013563

Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
Collector-base capacitance
V
emitter grounded
Collector emitter capacitance
V
base grounded
Emitter-base capacitance
V
collector grounded
Noise figure
I
f = 1 GHz
I
f = 1.8 GHz
Power gain
I
Z
Power gain, maximum available
I
Z
Transducer gain
I
f = 1 GHz
I
f = 1.8 GHz
1
C
C
C
C
C
C
C
G ma = | S 21 / S 12 | (k-(k²-1) 1/2 ), G ms = | S 21 / S 12 |
L
L
CB
CE
EB
= 15 mA, V
= 5 mA, V
= 3 mA, V
= 10 mA, V
= 10 mA, V
= 15 mA, V
= 10 mA, V
= Z
= Z
= 0.5 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
Lopt
Lopt
, f = 900 MHz
, f = 1.8 GHz
1)
CE
CE
CE
CE
CE
CE
CE
= 6 V, Z
= 8 V, Z
= 6 V, f = 1 GHz
= 8 V, Z
= 8 V, Z
= 6 V, Z
= 8 V, Z
S
S
BE
BE
S
S
S
S
CB
= Z
= Z
= Z
= Z
= Z
= Z
= 0 ,
= 0 ,
= 0 ,
Sopt
Sopt
Sopt
Sopt
L
L
A
= 50
= 50
1)
,
= 25°C, unless otherwise specified
,
,
,
,
,
3
Symbol
f
C
C
C
F
G
G
|S
T
cb
ce
eb
ms
ma
21e
|
2
min.
14
7
-
-
-
-
-
-
-
-
Values
21.5
0.25
0.15
15.5
typ.
0.7
1.3
17
12
9
1
max.
BFR949L3
0.4
2.5
2007-04-26
-
-
-
-
-
-
-
-
Unit
GHz
pF
dB
-
dB
dB