BFR 106 E6327 Infineon Technologies, BFR 106 E6327 Datasheet - Page 8

• Manufacturer Part Number: BFR 106 E6327
• Description: TRANSISTOR RF NPN 15V SOT-23
• Manufacturer: Infineon Technologies

Specifications of BFR 106 E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
• Gain: 8.5dB ~ 13dB
• Power - Max: 700mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 70mA, 8V
• Current - Collector (ic) (max): 210mA
• Mounting Type: Surface Mount
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 700 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFR106E6327XT; SP000011044

Datasheet Revision History: 3 Dezember 2010
This datasheet replaces the revisions from 30 March 2007.
The product itself has not been changed and the device characteristics remain unchanged.
Only the product description and information available in the datasheet has been expanded
and updated.
Previous Revision: 30 March 2007
Page
1
2
3
Subject (changes since last revision)
Datasheet has final status
Typical values for leakage currents included, values for maximum leakage
currents reduced
Spice Parameter removed from the datasheet, respective link to the internet
site added
8
2010-12-03
BFR106