BFR 93AW E6327 Infineon Technologies, BFR 93AW E6327 Datasheet - Page 3
![TRANSISTOR NPN RF 12V SOT-323](/photos/5/26/52615/pkg_sot-323_sml.jpg)
BFR 93AW E6327
Manufacturer Part Number
BFR 93AW E6327
Description
TRANSISTOR NPN RF 12V SOT-323
Manufacturer
Infineon Technologies
Datasheet
1.BFR_93AW_E6327.pdf
(8 pages)
Specifications of BFR 93AW E6327
Package / Case
SOT-323
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
6GHz
Noise Figure (db Typ @ F)
1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Gain
10.5dB ~ 15.5dB
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 30mA, 8V
Current - Collector (ic) (max)
90mA
Mounting Type
Surface Mount
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
300 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFR93AWE6327
BFR93AWE6327XT
SP000011071
BFR93AWE6327XT
SP000011071
Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
Collector-base capacitance
V
emitter grounded
Collector emitter capacitance
V
base grounded
Emitter-base capacitance
V
collector grounded
Minimum noise figure
I
f = 900 MHz
I
f = 1.8 GHz
Power gain, maximum available
I
f = 900 MHz
I
f = 1.8 GHz
Transducer gain
I
f = 900 MHz
I
f = 1.8 MHz
1
C
C
C
C
C
C
C
G ma = | S 21e / S 12e | (k-(k²-1) 1/2 )
CB
CE
EB
= 30 mA, V
= 5 mA, V
= 5 mA, V
= 30 mA, V
= 30 mA, V
= 30 mA, V
= 30 mA, V
= 0.5 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
CE
CE
CE
CE
CE
CE
CE
= 8 V, Z
= 8 V, Z
= 8 V, f = 500 MHz
= 8 V, Z
= 8 V, Z
= 8 V, Z
= 8 V, Z
S
S
BE
BE
S
S
S
S
CB
= Z
= Z
= Z
= Z
= Z
= Z
= 0 ,
= 0 ,
= 0 ,
Sopt
Sopt
Sopt
Sopt
L
L
A
1)
= 50
= 50
,
,
= 25°C, unless otherwise specified
, Z
, Z
L
L
= Z
= Z
,
,
Lopt
Lopt
,
,
3
Symbol
f
C
C
C
NF
G
|S
T
cb
ce
eb
ma
21e
min
|
2
min.
4.5
-
-
-
-
-
-
-
-
-
Values
15.5
10.5
0.58
typ.
0.3
1.9
1.5
2.6
7.5
13
6
max.
0.8
BFR93AW
2010-08-09
-
-
-
-
-
-
-
-
-
Unit
GHz
pF
dB
dB