BCX 41 E6433 Infineon Technologies, BCX 41 E6433 Datasheet - Page 2

• Manufacturer Part Number: BCX 41 E6433
• Description: TRANS NPN AF/SW 125V SOT-23
• Manufacturer: Infineon Technologies

Specifications of BCX 41 E6433

• Transistor Type: NPN
• Current - Collector (ic) (max): 800mA
• Voltage - Collector Emitter Breakdown (max): 125V
• Vce Saturation (max) @ Ib, Ic: 900mV @ 30mA, 300mA
• Current - Collector Cutoff (max): 10µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 200mA, 1V
• Power - Max: 330mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Other names: SP000010896

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
V
Collector-emitter cutoff current
V
V
Emitter-base cutoff current
V
DC current gain
I
I
I
Collector-emitter saturation voltage
I
Base emitter saturation voltage
I
AC Characteristics
Transition frequency
I
Collector-base capacitance
V
1
C
C
E
C
C
C
C
C
C
Pulse test: t < 300µs; D < 2%
CB
CB
CE
CE
EB
CB
= 10 µA, I
= 10 mA, I
= 100 µA, I
= 100 µA, V
= 100 mA, V
= 200 mA, V
= 300 mA, I
= 300 mA, I
= 20 mA, V
= 4 V, I
= 100 V, I
= 100 V, I
= 100 V, T
= 100 V, T
= 10 V, f = 1 MHz
C
C
B
E
= 0
CE
= 0
B
B
E
E
CE
= 0
A
A
CE
CE
= 0
1)
= 30 mA
= 30 mA
= 0
= 0 , T
= 85 °C
= 125 °C
= 5 V, f = 20 MHz
= 1 V
= 1 V
= 1 V
A
= 150 °C
1)
A
= 25°C, unless otherwise specified
1)
2
f
C
Symbol
V
V
V
I
I
I
h
V
V
T
CBO
CEO
EBO
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BEsat
cb
min.
125
125
25
63
40
5
-
-
-
-
-
-
-
-
-
Values
typ.
100
12
-
-
-
-
-
-
-
-
-
-
-
-
-
max.
100
0.1
0.9
1.4
20
10
75
2007-04-20
-
-
-
-
-
-
-
-
BCX41
MHz
pF
Unit
V
µA
nA
-
V