MX0912B251Y,114 NXP Semiconductors, MX0912B251Y,114 Datasheet - Page 9
MX0912B251Y,114
Manufacturer Part Number
MX0912B251Y,114
Description
TRANSISTOR POWER NPN SOT439A
Manufacturer
NXP Semiconductors
Datasheet
1.MX0912B251Y114.pdf
(12 pages)
Specifications of MX0912B251Y,114
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
20V
Frequency - Transition
1.215GHz
Gain
7.4dB
Power - Max
690W
Current - Collector (ic) (max)
15A
Mounting Type
Surface Mount
Package / Case
SOT-439A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Dc Current Gain (hfe) (min) @ Ic, Vce
-
Noise Figure (db Typ @ F)
-
Other names
934050610114
MX0912B251Y TRAY
MX0912B251Y TRAY
MX0912B251Y TRAY
MX0912B251Y TRAY
Philips Semiconductors
PACKAGE OUTLINE
1997 Feb 19
handbook, full pagewidth
NPN microwave power transistor
Dimensions in mm.
Torque on screws: max. 0.4 Nm.
Recommended screw: M3.
Recommended pitch for mounting screws: 19 mm.
3.3
2.9
3.3
0.15 max
seating plane
8.25
Fig.9 SOT439A.
12.85 max
23 max
16.5
max
3.7
3
9
2
1
1.6 max
9.85
max
MBC881
max
6
10.3
10.0
min
min
2.7
2.7
MX0912B251Y
Product specification