MZ0912B100Y,114 NXP Semiconductors, MZ0912B100Y,114 Datasheet - Page 9

• Manufacturer Part Number: MZ0912B100Y,114
• Description: TRANSISTOR POWER NPN SOT439A
• Manufacturer: NXP Semiconductors

Specifications of MZ0912B100Y,114

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 20V
• Frequency - Transition: 1.215GHz
• Gain: 7.6dB
• Power - Max: 290W
• Current - Collector (ic) (max): 6A
• Mounting Type: Surface Mount
• Package / Case: SOT-443A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Dc Current Gain (hfe) (min) @ Ic, Vce: -
• Noise Figure (db Typ @ F): -
• Other names: 933994050114; MZ0912B100Y TRAY; MZ0912B100Y TRAY

Philips Semiconductors
PACKAGE OUTLINES
1997 Feb 20
handbook, full pagewidth
NPN microwave power transistors
Dimensions in mm.
Torque on nut: max 0.4 Nm.
Recommended screw: M3
Recommended pitch for mounting screw: 19 mm.
3.3
2.9
3.3
0.15 max
seating plane
8.25
Fig.10 SOT439A.
12.85 max
23 max
16.5
max
3.7
9
3
2
1
MX0912B100Y; MZ0912B100Y
1.6 max
9.85
max
MBC881
max
6
10.3
10.0
min
min
2.7
2.7
Product specification