UPA806T-A CEL, UPA806T-A Datasheet - Page 3

• Manufacturer Part Number: UPA806T-A
• Description: TRANSISTOR NPN 12GHZ SOT363
• Manufacturer: CEL

Specifications of UPA806T-A

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 6V
• Frequency - Transition: 12GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2.5dB @ 2GHz
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 75 @ 10mA, 3V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Dc Collector/base Gain Hfe Min: 75
• Gain Bandwidth Product Ft: 12 GHz
• Mounting Style: SMD/SMT
• Configuration: Dual
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 6 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.03 A
• Power Dissipation: 0.1 W, 0.2 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
200
100
14
12
10
8
6
4
2
0
0.5
GAIN BANDWIDTH PRODUCT vs.
TOTAL POWER DISSIPATION vs.
f = 2 GHz
Ambient Temperature, T
1
AMBIENT TEMPERATURE
COLLECTOR CURRENT
Collector Current, lc (mA)
2 elements in total
2
50
Q1 when using 1 element
5
10
Q1 when using
2 elements
100
V
CE
A
Free Air
20
(°C)
5 V
3 V
= 1 V
50
150
0.6
0.5
0.4
0.3
0.2
50
40
30
20
10
0
0.5
COLLECTOR TO BASE VOLTAGE
V
Collector to Base Voltage, V
CE
FEEDBACK CAPACITANCE vs.
BASE TO EMITTER VOLTAGE
Base to Emitter Voltage, V
= 3 V
COLLECTOR CURRENT vs.
1
2
0.5
5
BE
CB
10
f = 1 MHz
(V)
(V)
1.0
20