UPA806T-A CEL, UPA806T-A Datasheet - Page 2

• Manufacturer Part Number: UPA806T-A
• Description: TRANSISTOR NPN 12GHZ SOT363
• Manufacturer: CEL

Specifications of UPA806T-A

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 6V
• Frequency - Transition: 12GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2.5dB @ 2GHz
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 75 @ 10mA, 3V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Dc Collector/base Gain Hfe Min: 75
• Gain Bandwidth Product Ft: 12 GHz
• Mounting Style: SMD/SMT
• Configuration: Dual
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 6 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.03 A
• Power Dissipation: 0.1 W, 0.2 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Note: 1. Operation in excess of any one of these parameters
ABSOLUTE MAXIMUM RATINGS
TYPICAL PERFORMANCE CURVES
SYMBOLS
V
V
V
T
PT
CBO
CEO
EBO
T
STG
I
C
J
may result in permanent damage.
10
8
6
4
2
4
3
2
1
0
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
0.5
0.5
f = 2 GHz
PARAMETERS
INSERTION POWER GAIN vs.
1
2
1 Die
2 Die
COLLECTOR CURRENT
COLLECTOR CURRENT
Collector Current, lc (mA)
Collector Current, lc (mA)
NOISE FIGURE vs.
2
5
Q1
5
10
10
UNITS
V
f = 2 GHz
20
mW
mW
CE
mA
V
°C
°C
V
V
V
20
CE
= 3 V
= 1 V
5 V
3 V
1
(T
-65 to +150
50
50
RATINGS
A
= 25°C)
110
200
150
30
9
6
2
ORDERING INFORMATION
PART NUMBER
UPA806T-T1-A
200
100
60
50
40
30
20
10
0
0
0.1 0.2
COLLECTOR TO EMITTER VOLTAGE
Collector to Emitter Voltage, V
COLLECTOR CURRENT vs.
COLLECTOR CURRENT
Collector Current, lc (mA)
DC CURRENT GAIN vs.
1
0.5
1
2
QUANTITY
V
CE
3000
2
= 3 V
3
5
10
4
5 V
20
l
B
=100 µA
5
CE
500 µA
400 µA
300 µA
200 µA
50
PACKAGING
(V)
Tape & Reel
100
6