BLT50,115 NXP Semiconductors, BLT50,115 Datasheet - Page 7

• Manufacturer Part Number: BLT50,115
• Description: TRANS NPN 7.5V SOT223
• Manufacturer: NXP Semiconductors

Specifications of BLT50,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 470MHz
• Power - Max: 2W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 300mA, 5V
• Current - Collector (ic) (max): 500mA
• Mounting Type: Surface Mount
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single Dual Emitter
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 3 V
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 2000 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934004150115; BLT50 T/R; BLT50 T/R

Philips Semiconductors
April 1991
handbook, full pagewidth
handbook, full pagewidth
UHF power transistor
The circuit and components are situated on one side of a copper-clad PTFE fibre-glass board; the other side is
unetched and serves as a ground plane. Earth connections from the component side to the ground plane are
made by means of fixing screws, hollow rivets and copper foil straps, as shown.
strap
strap
C1
Fig.7 Component layout for 470 MHz class-B test circuit.
C2
L1
L3
R1
L2
mounting
140 mm
screws
(8x)
7
C5
L4
L6
R2
L7
rivets
(14x)
V CC
L5
C7
C6
C3
C4
strap
strap
MBA574
MBA575
Product specification
80 mm
BLT50