UPA802T-A CEL, UPA802T-A Datasheet - Page 2

• Manufacturer Part Number: UPA802T-A
• Description: TRANSISTOR NPN HF 7GHZ SOT363
• Manufacturer: CEL

Specifications of UPA802T-A

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 7GHz
• Noise Figure (db Typ @ F): 1.4dB ~ 1.7dB @ 1GHz
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 7mA, 3V
• Current - Collector (ic) (max): 65mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Continuous Collector Current: 0.065 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
Note: 1. Operation in excess of any one of these parameters may
TYPICAL PERFORMANCE CURVES
UPA802T
SYMBOLS
V
V
V
T
PT
CBO
CEO
EBO
T
STG
I
C
J
result in permanent damage.
200
100
25
20
15
10
50
20
10
5
0
0.5
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
COLLECTOR TO EMITTER VOLTAGE
Collector to Emitter Voltage, V
PARAMETERS
COLLECTOR CURRENT vs.
1
COLLECTOR CURRENT
Collector Current, I
DC CURRENT GAIN vs.
1 Die
2 Die
0.5
5
10
C
(mA)
UNITS
V
mW
mW
mA
°C
°C
CE
V
V
V
l
CE
B
160 µA
140 µA
120 µA
100 µA
=20 µA
= 3 V
80 µA
60 µA
40 µA
(V)
1
1.0
50
(T
-65 to +150
RATINGS
A
(T
= 25°C)
110
200
150
1.5
20
10
65
A
= 25°C)
200
100
5.0
2.0
1.0
0.5
0.2
0.1
20
10
0
0
1
f = 1 MHz
V
COLLECTOR TO BASE VOLTAGE
TOTAL POWER DISSIPATION vs.
CE
Collector to Base Voltage, V
FEED BACK CAPACITANCE vs.
BASE TO EMITTER VOLTAGE
Base to Emitter Voltage, V
Ambient Temperature, T
= 3 V
COLLECTOR CURRENT vs.
AMBIENT TEMPERATURE
2
50
5
0.5
10
100
A
20
BE
(°C)
CB
(V)
Free Air
(V)
150
1.0
50