UPA802T-A CEL, UPA802T-A Datasheet

UPA802T-A

Manufacturer Part Number

UPA802T-A

Description

TRANSISTOR NPN HF 7GHZ SOT363

Manufacturer

CEL

Datasheet

1.UPA802T-T1-A.pdf (10 pages)

Specifications of UPA802T-A

Transistor Type

2 NPN (Dual)

Voltage - Collector Emitter Breakdown (max)

10V

Frequency - Transition

7GHz

Noise Figure (db Typ @ F)

1.4dB ~ 1.7dB @ 1GHz

Power - Max

200mW

Dc Current Gain (hfe) (min) @ Ic, Vce

70 @ 7mA, 3V

Current - Collector (ic) (max)

65mA

Mounting Type

Surface Mount

Package / Case

SC-70-6, SC-88, SOT-363

Mounting Style

SMD/SMT

Configuration

Single

Transistor Polarity

NPN

Continuous Collector Current

0.065 A

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gain

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

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NEC's UPA802T is two NPN high frequency silicon epitaxial

transistors encapsulated in an ultra small 6 pin SMT package.

Each transistor is independently mounted and easily config-

ured for either dual transistor or cascode operation. The high

various hand-held wireless applications.

ELECTRICAL CHARACTERISTICS

FEATURES

• SMALL PACKAGE STYLE:

• LOW NOISE FIGURE:

• HIGH GAIN:

• HIGH GAIN BANDWIDTH: f

• LOW CURRENT OPERATION

DESCRIPTION

Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

SYMBOLS

, low voltage bias and small size make this device suited for

FE1

2 NE681 Die in a 2 mm x 1.25 mm package

NF = 1.4 dB TYP at 1 GHz

Cre

CBO

EBO

21E

FE 1

21E

2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.

For Tape and Reel version use part number UPA802T-T1, 3K per reel.

FE2

= 12 dB TYP at 1 GHz

Collector Cutoff Current at V

Emitter Cutoff Current at V

Forward Current Gain at V

Gain Bandwidth at V

Feedback Capacitance at V

Insertion Power Gain at V

Noise Figure at V

Ratio:

PARAMETERS AND CONDITIONS

FE1

FE2

PACKAGE OUTLINE

= Smaller Value of Q

= Larger Value of Q

PART NUMBER

= 3 V, I

= 7 GHz

= 3 V, I

= 7 mA, f = 1 GHz

= 1 V, I

= 3 V, I

FREQUENCY TRANSISTOR

= 3 V, I

= 10 V, I

= 7 mA, f = 1 GHz

or Q

, or Q

=7 mA, f = 1 GHz

= 0

= 7 mA

= 0, f = 1 MHz

= 0

= 25°C)

NPN SILICON HIGH

UNITS

GHz

µA

PIN OUT

1. Collector Transistor 1

2. Emitter Transistor 1

3. Collector Transistor 2

4. Emitter Transistor 2

5. Base Transistor 2

6. Base Transistor 1

OUTLINE DIMENSIONS

2.0 ± 0.2

Note:

Pin 3 is identified with a circle on the bottom of the package.

0.9 ± 0.1

1.3

0.7

0.65

California Eastern Laboratories

0.85

MIN

4.5

PACKAGE OUTLINE S06

(Top View)

2.1 ± 0.1

1.25 ± 0.1

0 ~ 0.1

UPA802T

TYP

S06

100

7.0

1.4

(Units in mm)

UPA802T

0.2 (All Leads)

0.15

MAX

240

0.8

0.9

1.7

+0.10

- 0.05

Related parts for UPA802T-A

UPA802T-A Summary of contents

Page 1

... FE2 Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA802T-T1, 3K per reel. NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS 2.0 ± ...

Page 2

... UPA802T ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Collector to Base Voltage CBO V Collector to Emitter Voltage CEO V Emitter to Base Voltage EBO I Collector Current C PT Total Power Dissipation 1 Die 2 Die T Junction Temperature J T Storage Temperature STG Note: 1. Operation in excess of any one of these parameters may result in permanent damage. ...

Page 3

... GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GHz 0 Collector Current, I (mA) C INSERTION POWER GAIN vs. FREQUENCY 0.1 0.2 0.5 1.0 Frequency, f (GHz 25° 2.0 5.0 UPA802T INSERTION POWER GAIN vs. COLLECTOR CURRENT GHz 0 Collector Current, I (mA) C NOISE FIGURE vs. COLLECTOR CURRENT GHz 0.5 1.0 5.0 10 Collector Current, I (mA ...

Page 4

... TYPICAL SCATTERING PARAMETERS j50 j25 j10 S11 3.0 GHz 100 0 -j10 S22 3.0 GHz -j25 -j50 UPA802T(Q1 FREQUENCY S 11 (GHz) MAG ANG 0.10 0.958 -15.16 0.20 0.928 -28.69 0.40 0.848 -55.75 0.60 0.760 -78.46 0.80 0.687 -97.04 1.00 0.633 -112.40 1.20 ...

Page 5

... TYPICAL SCATTERING PARAMETERS j50 j25 j10 S11 3.0 GHz 100 0 S22 -j10 3.0 GHz -j25 -j50 UPA802T(Q2 FREQUENCY S 11 (GHz) MAG ANG 0.10 0.957 -14.40 0.20 0.931 -28.20 0.40 0.856 -55.36 0.60 0.770 -78.82 0.80 0.697 -98.60 1.00 0.646 -115.24 1.20 ...

Page 6

... UPA802T TYPICAL SCATTERING PARAMETERS j50 j25 j10 S11 3.0 GHz 100 0 -j10 S22 3.0 GHz -j25 -j50 UPA802T(Q1 2 FREQUENCY S 11 (GHz) MAG ANG 0.10 0.961 -13.74 0.20 0.936 -25.96 0.40 0.866 -51.02 0.60 0.784 -72.59 0.80 0.709 -90.73 1.00 0.652 -106.09 1 ...

Page 7

... UPA802T 90° 120° 60° 30° S21 3.0 GHz S21 0.1 GHz S12 S12 0° 3.0 GHz 0.1 GHz -30° -120° -60° -90° ...

Page 8

... TYPICAL SCATTERING PARAMETERS j50 j25 j10 S11 3.0 GHz 100 0 S22 3.0 GHz -j10 -j25 -j50 UPA802T(Q1 FREQUENCY S 11 (GHz) MAG ANG 0.10 0.824 -25.25 0.20 0.738 -47.27 0.40 0.566 -83.01 0.60 0.457 -107.67 0.80 0.395 -125.58 1.00 0.358 -139.68 1.20 ...

Page 9

... MSG = Maximum Stable Gain ORDERING INFORMATION PART NUMBER QUANTITY UPA802T-T1-A 3000 Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale ...

Page 10

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

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