NE461M02-T1-AZ CEL, NE461M02-T1-AZ Datasheet - Page 3

• Manufacturer Part Number: NE461M02-T1-AZ
• Description: TRANS NPN 1GHZ SOT-89 M02
• Manufacturer: CEL

Specifications of NE461M02-T1-AZ

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Noise Figure (db Typ @ F): 1.5dB ~ 3.5dB @ 500MHz ~ 1GHz
• Power - Max: 2W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 50mA, 10V
• Current - Collector (ic) (max): 250mA
• Mounting Type: Surface Mount
• Package / Case: SOT-89
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Continuous Collector Current: 0.25 A
• Power Dissipation: 2 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
10
7
6
5
4
3
2
1
0
5
0
5
INSERTION POWER GAIN vs.
Collector Current, Ic (mA)
COLLECTOR CURRENT
10
10
COLLECTOR CURRENT
Collector Current, Ic (mA)
NOISE FIGURE vs.
20
30
50 70 100
50
V
f = 1 GHz
CE
V
f = 1 GHz
CE
100
= 10 V
= 10 V
(T
A
= 25°C)
2ND ORDER INTERMODULATION DISTORTION (-) vs.
2ND ORDER INTERMODULATION DISTORTION (+) &
3RD ORDER INTERMODULATION DISTORTION
20
10
80
70
60
50
40
30
0
INSERTION POWER GAIN and MAXIMUM
10
AVAILABLE GAIN vs. FREQUENCY
V
CE
=10 V
V
I
C
CE
COLLECTOR CURRENT
Collector Current, I
= 50 MA
= 10 V
0.2
Frequency, f (GHz)
IM
IM
IM
3
2+
2-
: Vo = 110 dB µV/75 Ω 2 tone each
: Vo 105 dB µV/75 Ω 2 tone each
: Vo = 105 dB µV/75 Ω 2 tone each
f = 2 x 190 MHz - 200 Mhz
f = 90 MHz + 100 MHz
f = 190 MHz - 90 MHz
0.4
50
0.6 0.8 1.0
C
100
(mA)
IM
IM
IM
3
2+
2-
|S
MAG
1.4
21E
|
300
2
2.0