NE461M02 CEL, NE461M02 Datasheet

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NE461M02

Manufacturer Part Number
NE461M02
Description
RF Bipolar Power
Manufacturer
CEL
Datasheet
1.NE461M02-AZ.pdf (6 pages)

Specifications of NE461M02

Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
NE461M02-AZ
Manufacturer:
CEL
Quantity:
11
FEATURES
• HIGH COLLECTOR CURRENT:
• NEW HIGH GAIN POWER MINI-MOLD PACKAGE
• HIGH OUTPUT POWER AT 1 dB COMPRESSION:
• HIGH IP
DESCRIPTION
ELECTRICAL CHARACTERISTICS
NEC's NE461M02 is an NPN silicon epitaxial bipolar transistor
designed for medium power applications requiring high dy-
namic range and low intermodulation distortion. This device
offers excellent performance and reliability at low cost through
NEC's titanium, platinum, gold metallization system and direct
nitride passivation of the surface of the chip. The NE461M02
is an excellent choice for low noise amplifiers in the VHF to UHF
band and is suitable for CATV and other telecommunication
applications.
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Rs = R
SYMBOLS
250 mA MAX
(SOT-89 TYPE)
27 dBm TYP at 1 GHz
37 dBm TYP at 1 GHz
|S
I
h
I
NF
NF
IM
IM
CBO
EBO
21E
FE 2
2
3
1
2
|
2
L
= 50 Ω, tuned.
3
:
Collector Cutoff Current at V
Emitter Cutoff Current at V
DC Current Gain at V
Insertion Power Gain at V
Noise Figure 1 at V
Noise Figure 2 at V
2nd Order Intermodulation Distortion
V
Pin = 105 dB µV/75 Ω, f
f
3rd Order Intermodulation Distortion
V
Pin = 105 dB µV/75 Ω, f
f
2
2
CE
CE
= 90 MHz, f = f
= 200 MHz, f = 2 x f
= 10 V, I
= 10 V, I
PARAMETERS AND CONDITIONS
EIAJ
C
C
= 50 mA, Rs = R
= 50 mA, Rs = R
TRANSISTOR HIGH FREQUENCY
1
PACKAGE OUTLINE
REGISTERED NUMBER
1
PART NUMBER
- f
CE
CE
2
CE
1
LOW DISTORTION AMPLIFIER
= 10 V, I
= 10 V, I
- f
1
1
= 10 V, I
= 190 MHz
= 190 MHz
2
CE
EB
CB
= 10 V, I
= 2 V, I
C
C
= 20 V, I
L
L
= 50 mA, f = 500 MHz
= 50 mA, f = 1 GHz
C
= 75 Ω
= 75 Ω
NPN EPITAXIAL SILICON
= 50 mA
C
C
= 0
= 50 mA, f = 1 GHz
(T
E
= 0
A
= 25°C)
3
3
UNITS
µA
µA
dB
dB
dB
dB
dB
OUTLINE DIMENSIONS
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
0.42
±0.06
California Eastern Laboratories
MIN
7.0
40
BOTTOM VIEW
E
PACKAGE OUTLINE M02
1.5
4.5±0.1
1.6±0.2
3.0
C
B
0.45
±0.06
E
NE461M02
2SC5337
M02
TYP
0.01
0.03
59.0
82.0
0.42
±0.06
120
8.3
1.5
2.0
(Units in mm)
NE461M02
1.5±0.1
0.25±0.02
MAX
200
5.0
5.0
3.5
3.5

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NE461M02 Summary of contents

Page 1

... NEC's titanium, platinum, gold metallization system and direct nitride passivation of the surface of the chip. The NE461M02 is an excellent choice for low noise amplifiers in the VHF to UHF band and is suitable for CATV and other telecommunication applications ...

Page 2

... Collector to Emitter Voltage, V GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 0.5 0 Collector Current, Ic (mA) 1 ORDERING INFORMATION (T = 25°C) A UNITS RATINGS PART NUMBER V 30 NE461M02-T1- 3.0 mA 250 W 2.0 150 °C -65 to +150 ° 25°C) A 0.4 mA 0.3 mA 0 GHz 100 QUANTITY PACKAGING 1000 Tape & Reel DC CURRENT GAIN VS ...

Page 3

TYPICAL PERFORMANCE CURVES INSERTION POWER GAIN vs. COLLECTOR CURRENT 100 Collector Current, Ic (mA) NOISE FIGURE vs. COLLECTOR CURRENT Collector Current, ...

Page 4

... TYPICAL SCATTERING PARAMETERS j50 j25 j10 GHz 0 -j10 0.1 GHz 0.1 GHz -j25 NE461M02 -j50 FREQUENCY S 11 GHz MAG ANG 0.100 0.603 -142.0 0.200 0.615 -165.0 0.400 0.618 178.5 0.600 0.616 168.9 0.800 0.612 161.2 1.000 0.607 154.4 1.200 0.602 148.0 1 ...

Page 5

... TYPICAL SCATTERING PARAMETERS j50 j25 j10 GHz 3 GHz -j10 22 0.1 GHz 0.1 GHz -j25 NE461M02 -j50 100 FREQUENCY S 11 GHz MAG ANG 0.100 0.596 -144.8 0.200 0.601 -166.5 0.400 0.601 177.5 0.600 0.600 168.1 0.800 0.597 160.4 1.000 0.593 153.6 1.200 ...

Page 6

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

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