NE68118-A CEL, NE68118-A Datasheet - Page 16

• Manufacturer Part Number: NE68118-A
• Description: TRANSISTOR NPN 1GHZ SOT-343
• Manufacturer: CEL

Specifications of NE68118-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2.5dB @ 1GHz
• Gain: 14dB
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 20mA, 8V
• Current - Collector (ic) (max): 65mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Continuous Collector Current: 0.065 A
• Power Dissipation: 150 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NE68135 NONLINEAR MODEL
SCHEMATIC
BJT NONLINEAR MODEL PARAMETERS
(1) Gummel-Poon Model
Parameters
RBM
VAR
CJE
MJE
CJC
VJC
VAF
VJE
ISE
IKR
ISC
IRB
IKF
NR
NF
NE
BR
RE
RB
BF
NC
RC
IS
1.77e-11
1.2e-12
0.8e-12
2.7e-16
Infinity
Infinity
1.2e-5
185.0
0.055
BASE
1.02
15.0
0.77
0.27
Q1
2.1
0.6
3.7
0.5
12
0
1
1
8
2
Parameters
CBEX_PKG
RB_PKG
0.1 ohms
XCJC
0.1pF
MJC
MJS
XTB
CJS
VJS
XTF
VTF
PTF
ITF
XTI
EG
FC
TF
TR
KF
AF
LB_PKG
0.15nH
14e-12
0.3e-9
0.05pF
CBE_PKG
0.56
0.75
1.11
Q1
0.5
0.1
25
0
0
0
3
0
0
3
0
1
0.45nH
(1)
LB
0.07pF
CCB
CCB_PKG
0.11pF
RE_PKG
0.1 ohms
LE_PKG
0.38nH
EMITTER
CCE
0.01pF
0.96 nH
LC
0.15nH
Q1
LC_PKG
MODEL RANGE
Frequency:
Bias:
Date:
UNITS
CCE_PKG
0.2pF
CCEX_PKG
Parameter
time
capacitance
inductance
resistance
voltage
current
0.2pF
0.1 ohms
RC_PKG
0.05 to 5.0 GHz
V
11/1/96
CE
= 8.0 V, I
COLLECTOR
NE681 SERIES
C
= 7 mA to 30 mA
seconds
farads
henries
ohms
volts
amps
Units