NE68118-A CEL, NE68118-A Datasheet - Page 12

• Manufacturer Part Number: NE68118-A
• Description: TRANSISTOR NPN 1GHZ SOT-343
• Manufacturer: CEL

Specifications of NE68118-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2.5dB @ 1GHz
• Gain: 14dB
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 20mA, 8V
• Current - Collector (ic) (max): 65mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Continuous Collector Current: 0.065 A
• Power Dissipation: 150 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BJT NONLINEAR MODEL PARAMETERS
Note:
1. This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data.
NE68118 NONLINEAR MODEL
SCHEMATIC
(1) Gummel-Poon Model
Parameters
RBM
VAR
MJE
CJC
VAF
CJE
VJE
ISC
IRB
VJC
IKF
ISE
NR
NC
RC
BR
IKR
RE
RB
BF
NF
NE
IS
1.77e-11
2.7e-16
1.2e-12
0.8e-12
Infinity
Infinity
1.2e-5
0.055
1.02
0.77
0.27
185
Q1
2.1
0.6
3.7
0.5
15
12
1
1
0
8
2
Parameters
Base
XCJC
MJC
MJS
CJS
VJS
PTF
XTB
XTF
VTF
FC
EG
TF
ITF
XTI
KF
TR
AF
L
BX
(1)
C
14e-12
L
0.3e-9
BEPKG
0.56
0.75
B
1.11
0.5
0.1
Q1
25
0
0
0
3
0
0
3
0
1
C
C
CBPKG
CB
Emitter
L
L
E
EX
C
UNITS
ADDITIONAL PARAMETERS
L
MODEL RANGE
Frequency:
Bias:
Date:
CE
C
L
C
Parameters
Parameter
time
capacitance
inductance
resistance
voltage
current
C
L
CEPKG
C
C
L
L
L
C
C
C
L
L
L
CX
B
C
E
0.05 to 5.0 GHz
V
5/29/96
CB
CE
CBPKG
CEPKG
BEPKG
BX
CX
EX
CE
Q1
= 2.5 V to 8.0 V, I
Collector
C
= 3 mA to 10 mA
NE681 SERIES
0.07e-12
0.01e-12
1.16e-9
1.54e-9
0.83e-9
0.09e-12
0.51e-12
0.25e-12
0.18e-9
0.8e-9
0.09e-9
seconds
farads
henries
ohms
volts
amps
Units
68118