NE68119-A CEL, NE68119-A Datasheet - Page 5

• Manufacturer Part Number: NE68119-A
• Description: TRANSISTOR NPN 1GHZ SMD
• Manufacturer: CEL

Specifications of NE68119-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 7GHz
• Noise Figure (db Typ @ F): 1.4dB ~ 1.8dB @ 1GHz ~ 2GHz
• Gain: 10dB ~ 14dB
• Power - Max: 100mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 7mA, 3V
• Current - Collector (ic) (max): 65mA
• Mounting Type: Surface Mount
• Package / Case: Surface Mount
• Dc Collector/base Gain Hfe Min: 80
• Gain Bandwidth Product Ft: 7 GHz
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 3 GHz
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.065 A
• Power Dissipation: 0.1 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: NE68119-T1-A

TYPICAL PERFORMANCE CURVES
100
100
500
300
200
400
300
200
3.0
2.5
2.0
1.5
1.0
0.5
70
50
30
20
10
0
0
1
1
0
DC POWER DERATING CURVES
NE68133
Ambient Temperature, T
FORWARD CURRENT GAIN
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
Collector Current, I
Collector Current, I
2
2
50
3
3
NOISE FIGURE
NE68133
5
5
100
7
7
10
10
C
C
(mA)
(mA)
NE68135
150
A
V
20
V
f = 1 GHz
20
(°C)
CE
CE
(T
= 8 V
= 8 V
A
30
30
= 25°C)
200
50
50
2.5
2.0
1.5
1.0
0.5
20
3.0
3.0
50
30
10
5.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
7
3
2
5
1
0
1
COLLECTOR TO BASE CAPACITANCE
1
1
vs. COLLECTOR TO BASE VOLTAGE
Collector to Base Voltage, V
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
Collector Current, I
Collector Current, I
2
2
2
NE68100 & NE68135
3
3
3
NOISE FIGURE
5
5
5
7
7
7 10
10
10
V
f = 2 GHz
CE
C
C
= 8 V
(mA)
(mA)
NE68133
NE68135
NE681 SERIES
20
20
V
20
CB
CE
= 8 V
(V)
30
30
30
50
50
50