NE68119-A CEL, NE68119-A Datasheet - Page 2

• Manufacturer Part Number: NE68119-A
• Description: TRANSISTOR NPN 1GHZ SMD
• Manufacturer: CEL

Specifications of NE68119-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 7GHz
• Noise Figure (db Typ @ F): 1.4dB ~ 1.8dB @ 1GHz ~ 2GHz
• Gain: 10dB ~ 14dB
• Power - Max: 100mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 7mA, 3V
• Current - Collector (ic) (max): 65mA
• Mounting Type: Surface Mount
• Package / Case: Surface Mount
• Dc Collector/base Gain Hfe Min: 80
• Gain Bandwidth Product Ft: 7 GHz
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 3 GHz
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.065 A
• Power Dissipation: 0.1 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: NE68119-T1-A

ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed (PW ≤ 350 ms, duty cycle ≤ 2 %).
3. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
SYMBOLS
SYMBOLS
R
|S
R
C
TH (J-A)
|S
I
G
I
h
NF
CBO
EBO
C
TH (J-A)
21E
P
G
I
I
f
RE 3
h
NF
CBO
EBO
FE
NF
21E
P
T
f
RE 3
T
FE
NF
T
T
|
2
|
2
Gain Bandwidth Product at
V
V
Noise Figure at V
Associated Gain at V
Insertion Power Gain at
V
Forward Current Gain
Collector Cutoff Current at
V
Emitter Cutoff Current at
V
Feedback Capacitance at
V
V
Thermal Resistance (Junction to Ambient) °C/W
Total Power Dissipation
Gain Bandwidth Product at V
V
Noise Figure at V
Associated Gain at V
Insertion Power Gain at V
Forward Current Gain
V
Collector Cutoff Current at V
Emitter Cutoff Current at V
Feedback Capacitance at
V
Thermal Resistance (Junction to Ambient)
Total Power Dissipation
V
V
CE
CE
CE
CB
EB
CB
CB
CE
CE
CE
CE
CB
PARAMETERS AND CONDITIONS
= 8 V, I
= 3 V, I
= 8 V, I
= 10 V, I
= 1 V, I
= 3 V, I
= 10 V, I
= 3 V, I
= 3 V, I
= 10 V, I
= 8 V, I
= 3 V, I
PARAMETERS AND CONDITIONS
EIAJ
EIAJ
C
C
C
C
E
C
C
1
PACKAGE OUTLINE
C
C
E
E
PACKAGE OUTLINE
= 0 mA, f = 1 MHz
1
E
= 20 mA
= 7 mA
= 20 mA, f = 1 GHz
= 0 mA
REGISTERED NUMBER
= 7 mA
= 7 mA
= 20 mA
= 7 mA
REGISTERED NUMBER
PART NUMBER
= 0 mA
= 0 mA, f = 1 MHz
= 0 mA, f = 1 MHz
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2 GHz
PART NUMBER
CE
CE
= 8 V, I
= 8 V, I
CE
CE
2
2
at
at V
= 8 V, I
= 8 V, I
f = 2 GHz
CE
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2 GHz
EB
C
C
CE
CB
= 8 V, I
CE
= 7 mA,
= 7 mA, f = 1 GHz
= 1 V, I
= 8 V, I
(T
(T
C
C
= 10 V, I
= 8 V, I
A
= 7 mA,
A
= 7 mA,
= 25°C)
= 25°C)
C
C
C
= 20 mA,
f = 2 GHz
C
= 20 mA
= 0 mA
E
= 20 mA
= 0 mA
UNITS MIN TYP MAX MIN TYP MAX MIN
GHz
GHz
mW
dB
dB
dB
dB
dB
dB
µA
µA
pF
pF
50
9
00 (CHIP)
NE68100
100
9.0
1.6
0.2
12
17
11
UNITS
°C/W
GHz
GHz
mW
dB
dB
dB
dB
dB
dB
µA
µA
pF
600
250
1.0
1.0
2.3
0.7
80
13
50
MIN TYP MAX MIN
50
NE68118
2SC5012
NE68133
2SC3583
0.25
100
9.0
1.2
18
14
15
0.35
9.0
100
9
1.2
33
13
11
250
833
150
2.5
1.0
1.0
0.8
12.5
250
625
200
1.0
1.0
0.9
2
7
80
50
9
NE68119
2SC5007
NE68135
2SC3604
TYP MAX MIN
0.45
7.0
1.4
1.8
19
14
10
TYP MAX MIN TYP MAX
14
100
8
9.0
1.6
0.2
11
35
12
1000
160
100
1.0
1.0
0.9
250
590
295
2.3
1.0
1.0
0.7
NE681 SERIES
40
50
NE68139/39R
NE68130
2SC4227
2SC4094
TYP MAX
13.5
0.45
7.0
1.5
1.6
7.5
13.5
0.25
30
13
100
9.0
1.2
8.5
9
15
39
240
833
150
1.0
1.0
0.9
200
625
200
1.0
1.0
0.8
2