UPA901TU-T3-A CEL, UPA901TU-T3-A Datasheet - Page 3

• Manufacturer Part Number: UPA901TU-T3-A
• Description: TRANSISTOR NPN 5.8GHZ 8-MINI
• Manufacturer: CEL

Specifications of UPA901TU-T3-A

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Power - Max: 410mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 6mA, 3V / 80 @ 20mA, 3V
• Current - Collector (ic) (max): 75mA, 250mA
• Mounting Type: Surface Mount
• Package / Case: 8-MINIMOLD
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Continuous Collector Current: 0.075 A
• Power Dissipation: 410 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Frequency - Transition: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
-DC CHARACTERISTICS-
(1) Q1
(2) Q2
(3) Bias Circuit
I
BIAS
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Current Ratio (I
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Current Ratio (I
Bias Circuit Current
Note Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
The application circuits and their parameters are for reference only and are not intended for actual design-ins.
, I
(B1)
(C1)
C (set) 1
4
5
Q1
PARAMETER
PARAMETER
PARAMETER
(E)
, I
(E)
3
6
C (set) 1
C (set) 2
C (set) 2
I
BIAS
/I
/I
BIAS
BIAS
MEASUREMENT CIRCUIT
)
)
(N.C.)
(B2)
2
7
Bias
Circuit
Q2
(C2)
(Bias)
1
8
V
I
BIAS
BIAS
SYMBOL
SYMBOL
SYMBOL
V
h
h
BE
CR1
CR2
FE
FE
I
I
I
I
I
CBO
EBO
BIAS
CBO
EBO
Note
Note
(T
(B1)
(C1)
A
4
5
I
C (set) 1
= +25°C)
V
V
V
V
V
V
V
V
V
CB
EB
CE
CE
CB
EB
CE
CE
BIAS
Q1
I
V
C (set) 1
= 1 V, I
= 5 V, I
= 3 V, I
= 3.6 V, V
= 1 V, I
= 5 V, I
= 3 V, I
= 3.6 V, V
CE
= 0.865 V
(E)
(E)
3
6
= CR1
= 4.5
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
C
I
E
C
C
E
C
C (set) 1
= 0 mA
= 0 mA
= 6 mA
= 0 mA
= 0 mA
= 20 mA
BE
BE
×
×
= V
I
= V
I
BIAS
(N.C.)
(B2)
BIAS
2
7
BIAS
BIAS
Bias
Circuit
Q2
(TYP.)
= 0.865 V
= 0.865 V
(C2)
(Bias)
1
8
MIN.
MIN.
MIN.
(B1)
(C1)
80
80
−
−
−
2
−
−
8
4
5
I
C (set) 2
Q1
(E)
(E)
TYP.
TYP.
TYP.
3
6
120
120
= CR2
= 4.5
4.5
10
4
−
−
−
−
I
C (set) 2
V
BE
×
×
MAX.
I
MAX.
MAX.
BIAS
120
160
200
400
160
(N.C.)
(B2)
60
13
I
−
9
2
7
BIAS
Bias
Circuit
Q2
(TYP.)
(C2)
(Bias)
1
UNIT
UNIT
UNIT
8
I
C (set) 2
mA
nA
nA
nA
nA
−
−
−
−
V
CE