UPA901TU-T3-A CEL, UPA901TU-T3-A Datasheet - Page 2
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UPA901TU-T3-A
Manufacturer Part Number
UPA901TU-T3-A
Description
TRANSISTOR NPN 5.8GHZ 8-MINI
Manufacturer
CEL
Datasheet
1.UPA901TU-T3-A.pdf
(9 pages)
Specifications of UPA901TU-T3-A
Transistor Type
2 NPN (Dual)
Voltage - Collector Emitter Breakdown (max)
4.5V
Power - Max
410mW
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 6mA, 3V / 80 @ 20mA, 3V
Current - Collector (ic) (max)
75mA, 250mA
Mounting Type
Surface Mount
Package / Case
8-MINIMOLD
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Continuous Collector Current
0.075 A
Power Dissipation
410 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Frequency - Transition
-
Noise Figure (db Typ @ F)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
UPA901TU-T3-A
Manufacturer:
TRIQUINT
Quantity:
442
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
THERMAL RESISTANCE
RECOMMENDED OPERATING RANGE
ABSOLUTE MAXIMUM RATINGS
Channel to Ambient Resistance
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current of Q1
Collector Current of Q2
Bias Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Operating Ambient Temperature
Collector to Emitter Voltage
Total Current
Input Power
Note Mounted on 20 × 20 × 0.8 mm (t) glass epoxy PCB (FR-4)
Note Mounted on 20 × 20 × 0.8 mm (t) glass epoxy PCB (FR-4)
PARAMETER
PARAMETER
PARAMETER
(B1)
(C1)
4
5
Q1
(Top View)
(E)
(E)
3
6
(T
SYMBOL
R
A
SYMBOL
SYMBOL
th (j-a1)
R
=+25ºC)
P
th (j-a2)
(N.C.)
V
V
V
I
V
(B2)
tot
T
I
BIAS
P
I
I
T
total
CBO
CEO
EBO
T
C1
C2
stg
CE
2
7
Note
A
in
j
Note
Bias
Circuit
Q2
(T
(Bias)
Free Air
(C2)
1
A
8
=+25ºC)
MIN.
TEST CONDITIONS
−
−
−
(All Parameters)
−65 to +150
−40 to +85
RATINGS
TYP.
250
410
150
4.5
3.6
15
75
25
90
−3
2
MAX.
300
4.5
+5
UNIT
UNIT
mW
dBm
mA
mA
mA
°C
°C
°C
mA
V
V
V
RATINGS
V
TBD
150
UNIT
°C/W
°C/W