NE685M33-A CEL, NE685M33-A Datasheet - Page 3

• Manufacturer Part Number: NE685M33-A
• Description: TRANSISTOR NPN 2GHZ M33
• Manufacturer: CEL

Specifications of NE685M33-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 6V
• Frequency - Transition: 12GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2.5dB @ 2GHz
• Power - Max: 130mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 75 @ 10mA, 3V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Package / Case: Surface Mount
• Configuration: Single
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS
Remark The graphs indicate nominal characteristics.
0.0001
0.0001
0.001
0.001
0.01
0.01
250
200
150
100
100
100
0.1
0.1
130
10
10
50
0
1
1
0.4
0.4
V
V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
CE
CE
0.5
0.5
25
= 1 V
= 3V
Base to Emitter Voltage V
Base to Emitter Voltage V
Ambient Temperature T
Mounted on Glass Epoxy PCB
(1.08 cm
0.6
0.6
50
2
× 1.0 mm (t) )
0.7
0.7
75
100
0.8
0.8
A
(T
BE
BE
(ºC)
A
(V)
(V)
=+25ºC, unless otherwise specified)
125
0.9
0.9
150
1.0
1.0
0.0001
0.001
0.01
100
0.5
0.4
0.3
0.2
0.1
0.1
40
35
30
25
20
15
10
10
5
0
0
1
0.4
REVERSE TRANSFER CAPACITANCE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
vs. COLLECTOR TO BASE VOLTAGE
400 A
V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
CE
µ
Collector to Emitter Voltage V
0.5
= 2 V
Collector to Base Voltage V
Base to Emitter Voltage V
2
350 A
2
µ
0.6
4
300 A
0.7
µ
4
6
0.8
250 A
BE
6
µ
CB
f = 1 MHz
I
CE
(V)
B
8
(V)
0.9
= 50 A
(V)
150 A
100 A
200 A
µ
µ
µ
µ
1.0
10
8