NE685M33-A CEL, NE685M33-A Datasheet - Page 2

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NE685M33-A

Manufacturer Part Number
NE685M33-A
Description
TRANSISTOR NPN 2GHZ M33
Manufacturer
CEL
Datasheet

Specifications of NE685M33-A

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
6V
Frequency - Transition
12GHz
Noise Figure (db Typ @ F)
1.5dB ~ 2.5dB @ 2GHz
Power - Max
130mW
Dc Current Gain (hfe) (min) @ Ic, Vce
75 @ 10mA, 3V
Current - Collector (ic) (max)
30mA
Mounting Type
Surface Mount
Package / Case
Surface Mount
Configuration
Single
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
ELECTRICAL CHARACTERISTICS
h
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
FE
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
h
Marking
FE
RANK
CLASSIFICATION
Value
2. Collector to base capacitance when the emitter grounded
PARAMETER
75 to 150
FB
Y2
SYMBOL
h
C
|S
FE
re
I
I
NF
CBO
EBO
21e
f
Note 1
Note 2
T
|
2
V
V
V
V
V
V
Z
V
S
CB
EB
CE
CE
CE
CE
CB
= Z
(T
= 1 V, I
= 5 V, I
= 3 V, I
= 3 V, I
= 3 V, I
= 3 V, I
= 3 V, I
A
opt
=+25ºC)
TEST CONDITIONS
C
E
C
C
C
C
C
= 0 mA
= 0 mA
= 10 mA
= 10 mA, f = 2 GHz
= 10 mA, f = 2 GHz
= 3 mA, f = 2 GHz,
= 0 mA, f = 1 MHz
MIN.
75
10
7
TYP.
110
1.5
0.4
12
11
MAX.
100
100
150
2.5
0.7
UNIT
GHz
nA
nA
dB
dB
pF

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