NE664M04-T2-A CEL, NE664M04-T2-A Datasheet - Page 4

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NE664M04-T2-A

Manufacturer Part Number
NE664M04-T2-A
Description
TRANSISTOR NPN 1.8GHZ M04
Manufacturer
CEL
Datasheet

Specifications of NE664M04-T2-A

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
5V
Frequency - Transition
20GHz
Gain
12dB
Power - Max
735mW
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 100mA, 3V
Current - Collector (ic) (max)
500mA
Mounting Type
Surface Mount
Package / Case
M04
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Continuous Collector Current
0.5 A
Power Dissipation
735 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure (db Typ @ F)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
TYPICAL PERFORMANCE CURVES
20
15
10
25
20
15
10
20
15
10
5
0
5
0
5
0
1
1
1
INSERTION POWER GAIN, MAG, MSG
INSERTION POWER GAIN, MAG, MSG
V
f = 0.5 GHz
V
f = 2.5 GHz
MSG
V
f = 1 GHz
CE
CE
GAIN BANDWIDTH PRODUCT vs.
CE
= 3 V
= 3 V
= 3 V
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
Collector Current, I
Collector Current, I
COLLECTOR CURRENT
Collector Current, I
MAG
10
10
10
MSG
100
100
100
C
C
C
|
|
S
(mA)
(mA)
(mA)
S
21e
MAG
21e
|
|
2
2
1000
1000
1000
(T
A
= 25°C)
20
15
10
35
30
25
20
15
10
5
0
5
0
1
INSERTION POWER GAIN, MAG, MSG
INSERTION POWER GAIN, MAG, MSG
V
f = 2 GHz
CE
MSG
= 3 V
vs. COLLECTOR CURRENT
Collector Current, I
MSG
vs. FREQUENCY
Frequency, f (Hz)
10
MAG
1
|
MAG
S
21e
|
2
100
C
|
S
(mA)
21e
V
I
C
CE
|
= 100 mA
2
= 3 V
1000
10

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