NE664M04-T2-A CEL, NE664M04-T2-A Datasheet

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NE664M04-T2-A

Manufacturer Part Number
NE664M04-T2-A
Description
TRANSISTOR NPN 1.8GHZ M04
Manufacturer
CEL
Datasheet

Specifications of NE664M04-T2-A

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
5V
Frequency - Transition
20GHz
Gain
12dB
Power - Max
735mW
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 100mA, 3V
Current - Collector (ic) (max)
500mA
Mounting Type
Surface Mount
Package / Case
M04
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Continuous Collector Current
0.5 A
Power Dissipation
735 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure (db Typ @ F)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
• HIGH GAIN BANDWIDTH:
• HIGH OUTPUT POWER:
• HIGH LINEAR GAIN:
• LOW PROFILE M04 PACKAGE:
ELECTRICAL CHARACTERISTICS
FEATURES
DESCRIPTION
NEC's NE664M04 is fabricated using NEC's state-of-the-art
UHS0 25 GHz f
of 20 GHz, the NE664M04 is usable in applications from 100
MHz to over 3 GHz. The NE664M04 provides P1dB of 26 dBm,
even with low voltage and low current, making this device an
excellent choice for the output or driver stage for mobile or
fixed wireless applications.
The NE664M04 is housed in NEC's low profile/flat lead style
"M04" package
Notes:
1. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.
2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the
3. Electronic Industrail Association of Japan
4.
guard pin of capacitance meter.
MAG =
f
P
G
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
T
-1dB
L
= 20 GHz
= 12 dB at 1.8 GHz
SYMBOLS
= 26 dBm at 1.8 GHz
|S
|S
|S
MAG
I
P
I
Cre
h
CBO
EBO
G
21E
η
f
21
12
SILICON HIGH FRQUENCY TRANSISTOR
1dB
FE
T
c
L
|
|
|
2
(
T
K -
wafer process. With a transition frequency
Collector Cutoff Current at V
Emitter Cutoff Current at V
DC Current
Output Power at 1 dB compression point at V
f = 1.8 GHz, P
Linear Gain at V
1/2 Duty Cycle
Maximum Available Power Gain
Insertion Power Gain at V
Collector Efficiency, 3.6 V, I
1/2 Duty Cycle
Gain Bandwidth at V
Feedback Capacitance
K - 1
2
).
1
Gain at V
in
= 15 dBm, 1/2 Duty Cycle
CE
PARAMETERS AND CONDITIONS
EIAJ
= 3.6 V, I
CE
CE
2
3
= 3 V, I
at V
PACKAGE OUTLINE
REGISTRATION NUMBER
= 3 V, I
CE
EB
PART NUMBER
Cq
CB
Cq
CB
= 3 V, I
= 1 V, I
= 4 mA, f = 1.8 GHz, P
C
= 5V, I
= 3 V, I
= 20 mA, f = 1.8 GHz, P
4
C
= 100 mA, f = 0.5 GHz
(T
at V
= 100 mA
A
C
MEDIUM POWER NPN
C
= 25°C)
CE
E
= 100 mA, f = 2 GHz
= 0
C
= 0
= 3 V, I
= 0, f = 1 MHz
CE
C
= 3.6 V, I
= 100 mA, f = 2 GHz
in
= 15 dBm,
in
Cq
= 0 dBm,
= 4 mA,
California Eastern Laboratories
UNITS
dBm
GHz
nA
nA
dB
dB
dB
pF
NEC's
%
PIN CONNECTIONS
1. Emitter
2. Collector
+0.30
2.05±0.1
1.25±0.1
MIN
5.0
40
16
3. Emitter
4. Base
NE664M04
NE664M04
2SC5754
M04
TYP
26.0
12.0
12.0
6.5
1.0
60
60
20
MAX
1000
1000
100
1.5

Related parts for NE664M04-T2-A

NE664M04-T2-A Summary of contents

Page 1

... With a transition frequency GHz, the NE664M04 is usable in applications from 100 MHz to over 3 GHz. The NE664M04 provides P1dB of 26 dBm, even with low voltage and low current, making this device an excellent choice for the output or driver stage for mobile or fixed wireless applications. ...

Page 2

... GHz 0 dBm SS Cordless Phone f = 2.4 GHz DCS1800 (GSM1800) Cellular Phone f = 1.8 GHz 5 dBm Cordless Phone f = 0.9 GHz ñ3 dBm ORDERING INFORMATION 25°C) A PART NUMBER UNITS RATINGS NE664M04-T2 5.0 V 1.5 mA 500 THERMAL RESISTANCE mW 735 SYMBOLS °C 150 R th j-a °C -65 to +150 ...

Page 3

TYPICAL PERFORMANCE CURVES TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 1000 Mounted on Polyimide PCB 800 ( mm 0.4 mm) 735 600 400 Stand alone device in free air 205 200 100 Ambient ...

Page 4

TYPICAL PERFORMANCE CURVES GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 0.5 GHz 100 Collector Current INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 ...

Page 5

TYPICAL PERFORMANCE CURVES OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, & COLLECTOR EFFICIENCY vs. INPUT POWER 3 0.9 GHz mA, 1/2 Duty out ...

Page 6

LARGE SIGNAL IMPEDANCES FREQUENCY COLLECTOR TO EMITTER f (GHz) VOLTAGE V (V) CE 0.9 2.8 to 3.6 1.8 2.8 to 3.6 2.4 2 1.8 GHz SOURCE IMPEDANCE LOAD IMPEDANCE Z (Ω) Z ...

Page 7

... TYPICAL SCATTERING PARAMETERS j50 S 11 j100 j25 j10 100 -j10 S 22 -j100 -j25 -j50 NE664M04 FREQUENCY S 11 GHz MAG ANG 0.50 0.784 -161.6 1.00 0.801 178.1 1.50 0.810 166.2 2.00 0.812 157.2 2.50 0.820 149.0 3.00 0.827 141.5 3.50 0.834 133.6 4 ...

Page 8

... TYPICAL SCATTERING PARAMETERS j50 j100 j25 j10 S 22 100 -j10 -j100 -j25 -j50 NE664M04 100 FREQUENCY S 11 GHz MAG ANG 0.50 0.808 177.3 1.00 0.812 167.0 1.50 0.819 158.7 2.00 0.822 151.3 2.50 0.830 143.8 3.00 0.831 137.2 3.50 0.834 129.9 4 ...

Page 9

... TYPICAL SCATTERING PARAMETERS j50 j100 j25 S 22 j10 100 -j10 -j100 -j25 -j50 NE664M04 200 FREQUENCY S 11 GHz MAG ANG 0.50 0.801 175.9 1.00 0.808 166.3 1.50 0.815 158.4 2.00 0.819 150.9 2.50 0.822 143.9 3.00 0.830 136.8 3.50 0.832 129.7 4 ...

Page 10

...

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