NE68939-T1-A CEL, NE68939-T1-A Datasheet - Page 2

• Manufacturer Part Number: NE68939-T1-A
• Description: TRANS NPN 1.9GHZ SOT-143
• Manufacturer: CEL

Specifications of NE68939-T1-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 6V
• Gain: 6.5dB ~ 8dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 100mA, 3.6V
• Current - Collector (ic) (max): 150mA
• Mounting Type: Surface Mount
• Package / Case: SOT-143, SOT-143B, TO-253AA
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Continuous Collector Current: 0.15 A
• Power Dissipation: 0.2 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

+3 dBm
-14 dBm
Note:
1. Operation in excess of any one of these parameters may result
APPLICATION
(1) TX Amplifier for DECT
(2) TX Amplifier for PHS
TYPICAL DATA
f = 1.9 GHz, V
ABSOLUTE MAXIMUM RATINGS
SYMBOLS
in permanent damage.
V
V
V
T
30
25
20
15
10
P
η
I
G
P
CBO
CEO
EBO
STG
5
I
T
C
DATA SUBJECT TO CHANGE WITHOUT NOTICE
C
C
1dB
T
j
L
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • [phone] • Telex 34-6393 • FAX [phone]
EFFICIENCY, COLLECTOR CURRENT
f = 1.9 GH
I
C
µPC2771T
NE68839
= 1mA (Duty 1/8)
OUTPUT POWER, COLLECTOR
AND POWER GAIN VS. INPUT
CC
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current mA
Total Power Dissipation
Junction Temperature
Storage Temperature
EXCLUSIVE NORTH AMERICAN AGENT FOR
5
= 3.6 V, I
Z
Input Power, Pin (dBm)
, V
PARAMETERS
CC
10
= 3.6V
POWER
Pout
CQ
NE68939
NE68939
24.5
62
15
9.0
= 1 mA, DUTY = 1/8
15
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
η
C
20
NE69039
NE69039
G
I
C
P
UNITS
150
mW
°C
°C
V
V
V
25
dbm
mA
db
%
80
60
40
20
0
8
7
6
5
4
1
(T
-65 to +150
RATINGS
200 (CW)
A
30
20
10
Po = 27 dBm
P1 = 22 dBm
= 25 °C)
150
0
9.0
6.0
2.0
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
IMPEDANCE LOOKING INTO DEVICE
V
CC
FREQUENCY
= 3.6 V, I
(GH
Z IN
0.9
1.9
Z
)
CQ
ORDERING INFORMATION
-j10
0
j10
= I mA, CLASS AB
PART NUMBER
NE68939-T1-A
Note:
1. Lead material: Cu
1.9
RECOMMENDED P.C.B. LAYOUT
Lead plating: PbSn
-j25
j25
2
1
Z
Z
IN
IN
(Ω Ω Ω Ω Ω ), Z
7.85+j5.62
Z
3.1+j11.6
OUT
OUTLINE 39
Z
(Ω Ω Ω Ω Ω )
IN
OUT
-j50
j50
(Ω Ω Ω Ω Ω ) DATA
2.4
1.0
QTY
3K/REEL
j100
-j100
21.9-j11.6
5.3-j5.7
3
Z
4
OUT
07/05/2000
(Ω Ω Ω Ω Ω )
Z OUT
1.0
0