NE68939-T1-A CEL, NE68939-T1-A Datasheet
NE68939-T1-A
Manufacturer Part Number
NE68939-T1-A
Description
TRANS NPN 1.9GHZ SOT-143
Manufacturer
CEL
Datasheet
1.NE68939-T1-A.pdf
(3 pages)
Specifications of NE68939-T1-A
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
6V
Gain
6.5dB ~ 8dB
Power - Max
200mW
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 100mA, 3.6V
Current - Collector (ic) (max)
150mA
Mounting Type
Surface Mount
Package / Case
SOT-143, SOT-143B, TO-253AA
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Continuous Collector Current
0.15 A
Power Dissipation
0.2 W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Noise Figure (db Typ @ F)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
DESCRIPTION
NEC's NE68939 is a low voltage, NPN Silicon Bipolar Tran-
sistor for pulsed power applications. The device is designed
to operate from a 3.6 V supply, and deliver over 1/4 watt of
power output at frequencies up to 2.0 GH
cycle. These characteristics make it an ideal device for TX
driver stage in a 1.9 GH
PHS). The part is supplied in a SOT-143 (SC-61) 4-pin Mini-
mold package and is available on tape and reel.
The NE68939 transistors are manufactured to NEC's strin-
gent quality assurance standards to ensure highest reliability
and consistent superior performance.
ELECTRICAL CHARACTERISTICS
FEATURES
• OUTPUT POWER AT 1dB COMPRESSION POINT:
• 4 PIN MINI MOLD PACKAGE: NE68939
24.5 dBm TYP @F = 1.9 GH
Duty 1/8
SYMBOLS
I
I
T
h
CBO
EBO
P
η
G
ON
FE
-1
C
p
Collector Cutoff Current, V
Emitter Cutoff Current, V
DC Current Gain, V
Output Power
Power Gain
Collector Efficiency
Maximum Device On Time
Z
digital cordless telephone (DECT or
PACKAGE CODE
PART NUMBER
NEC'S NPN SILICON EPITAXIAL
Z
, V
CE
PARAMETERS
CE
= 3.6 V, Class AB,
= 3.6 V, I
V
Duty 1/8
ICq = 2 mA (Class AB)
CE
EB
CB
Z
= 3.6 V, f = 1.9 GH
= 1 V, I
with a 1:8 duty
= 5 V, I
C
= 100 mA
(T
C
A
= 0
E
= 25 °C)
= 0
Z
TRANSISTOR
OUTLINE DIMENSIONS
UNITS
2.9 ± 0.2 0.95
dBm
µA
µA
M
dB
%
S
1.1
+0.2
-0.1
California Eastern Laboratories
0.85
0.6
0.8
+0.10
-0.05
PACKAGE OUTLINE 39
MIN
6.5
30
50
5˚
2
1
2.8
1.5
+0.2
+0.2
0 to 0.1
-0.3
-0.1
NE68939
NE68939
(Units in mm)
39
TYP
24.5
62
8
3
4
5˚
(LEADS 2, 3, 4)
0.4
0.16 +0.10
1) Collector
2) Emitter
3) Base
4) Emitter
+0.10
-0.05
1.9
-0.06
MAX
10.0
2.5
2.5
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NE68939-T1-A Summary of contents
Page 1
... CE Duty 1/8 • 4 PIN MINI MOLD PACKAGE: NE68939 DESCRIPTION NEC's NE68939 is a low voltage, NPN Silicon Bipolar Tran- sistor for pulsed power applications. The device is designed to operate from a 3.6 V supply, and deliver over 1/4 watt of power output at frequencies up to 2.0 GH cycle. These characteristics make it an ideal device for TX driver stage ...
Page 2
... RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS OUTLINE 39 RECOMMENDED P.C.B. LAYOUT 2.4 2 1.9 1 1.0 ORDERING INFORMATION PART NUMBER QTY NE68939-T1-A 3K/REEL Note: 1. Lead material: Cu Lead plating: PbSn Z (Ω Ω Ω Ω Ω (Ω Ω Ω Ω Ω ) DATA IN OUT j50 j100 j25 j10 ...
Page 3
... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...