UPA895TS-T3-A CEL, UPA895TS-T3-A Datasheet - Page 3
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UPA895TS-T3-A
Manufacturer Part Number
UPA895TS-T3-A
Description
TRANSISTOR NPN DUAL 6-SMINI
Manufacturer
CEL
Datasheet
1.UPA895TS-T3-A.pdf
(7 pages)
Specifications of UPA895TS-T3-A
Transistor Type
2 NPN (Dual)
Voltage - Collector Emitter Breakdown (max)
5.5V
Frequency - Transition
6.5GHz
Noise Figure (db Typ @ F)
1.9dB ~ 2.5dB @ 2GHz
Power - Max
130mW
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 5mA, 1V
Current - Collector (ic) (max)
100mA
Mounting Type
Surface Mount
Package / Case
6-SMINI
Configuration
Single
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
TYPICAL CHARACTERISTICS (T
0.0001
Remark The graphs indicate nominal characteristics.
0.001
0.01
250
200
150
100
100
130
110
0.1
50
10
60
50
40
30
20
10
0
1
0
0.4
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
V
2 Elements in total
1 Element
CE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
= 1 V
1
Collector to Emitter Voltage V
0.5
25
Base to Emitter Voltage V
Ambient Temperature T
Mounted on Glass Epoxy PCB
(1.08 cm
2
0.6
50
400 A
360 A
3
320 A
2
0.7
75
280 A
1.0 mm (t) )
240 A
4
100
200 A
0.8
A
5
A
BE
(˚C)
160 A
= +25 C, unless otherwise specified)
I
CE
B
(V)
125
0.9
= 40 A
(V)
120 A
80 A
6
Data Sheet PU10335EJ02V0DS
150
1.0
7
0.0001
0.001
0.01
100
1.0
0.8
0.6
0.4
0.2
0.1
10
0
1
0.4
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
V
CE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
= 2 V
0.5
Collector to Base Voltage V
Base to Emitter Voltage V
2
0.6
4
0.7
6
0.8
BE
CB
f = 1 MHz
(V)
8
(V)
PA895TS
0.9
1.0
10
3