UPA895TS-T3-A CEL, UPA895TS-T3-A Datasheet

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UPA895TS-T3-A

Manufacturer Part Number
UPA895TS-T3-A
Description
TRANSISTOR NPN DUAL 6-SMINI
Manufacturer
CEL
Datasheet
1.UPA895TS-T3-A.pdf (7 pages)

Specifications of UPA895TS-T3-A

Transistor Type
2 NPN (Dual)
Voltage - Collector Emitter Breakdown (max)
5.5V
Frequency - Transition
6.5GHz
Noise Figure (db Typ @ F)
1.9dB ~ 2.5dB @ 2GHz
Power - Max
130mW
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 5mA, 1V
Current - Collector (ic) (max)
100mA
Mounting Type
Surface Mount
Package / Case
6-SMINI
Configuration
Single
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Document No. PU10335EJ02V0DS (2nd edition)
Date Published September 2003 CP(K)
Printed in Japan
FEATURES
• Built-in low voltage operation, low phase distortion transistor suited for OSC applications
• Built-in 2 transistors (2
• 6-pin super lead-less minimold package
BUILT-IN TRANSISTORS
ORDERING INFORMATION
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Flat-lead 3-pin thin-type ultra super minimold part No.
PA895TS
PA895TS-T3
Remark To order evaluation samples, contact your nearby sales office.
f
T
= 4.5 GHz TYP., S
Part Number
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
The unit sample quantity is 50 pcs.
NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)
21e
50 pcs (Non reel)
10 kpcs/reel
IN A 6-PIN SUPER LEAD-LESS MINIMOLD
2SC5800)
2
= 4.0 dB TYP. @ V
Quantity
The mark
DATA SHEET
CE
• 8 mm wide embossed taping
• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape
shows major revised points.
= 1 V, I
NPN SILICON RF TWIN TRANSISTOR
2SC5800
C
Q1, Q2
= 5 mA, f = 2 GHz
Supplying Form
NEC Compound Semiconductor Devices 2002, 2003
PA895TS

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UPA895TS-T3-A Summary of contents

Page 1

NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Built-in low voltage operation, low phase distortion transistor suited for OSC applications 4.5 GHz TYP 4.0 dB TYP ...

Page 2

ABSOLUTE MAXIMUM RATINGS (T Parameter Symbol Collector to Base Voltage V Collector to Emitter Voltage V Emitter to Base Voltage V Collector Current Total Power Dissipation P tot Junction Temperature Storage Temperature T 2 Note Mounted on 1.08 cm 1.0 ...

Page 3

TYPICAL CHARACTERISTICS (T TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 250 Mounted on Glass Epoxy PCB 2 (1.08 cm 1.0 mm (t) ) 200 150 2 Elements in total 130 110 100 1 Element 100 Ambient ...

Page 4

DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 100 10 0 Collector Current I (mA) C Remark The graphs indicate nominal characteristics CURRENT GAIN vs. COLLECTOR CURRENT 1 000 100 10 ...

Page 5

PACKAGE DIMENSIONS 6-PIN SUPER LEAD-LESS MINIMOLD (UNIT: mm) 0.9±0.05 0.7±0.05 (Top View PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Base (Q2) 5. Emitter (Q2) 6. Base (Q1) Data Sheet ...

Page 6

The information in this document is current as of September, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

Page 7

... TEL: +852-3107-7303 TEL: +886-2-8712-0478 Taipei Branch Office TEL: +82-2-558-2120 Korea Branch Office NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-01 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 http://www.ncsd.necel.com/ FAX: +852-3107-7309 FAX: +886-2-2545-3859 FAX: +82-2-558-5209 PA895TS 0307 ...

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