NE851M13-A CEL, NE851M13-A Datasheet - Page 9

• Manufacturer Part Number: NE851M13-A
• Description: TRANSISTOR NPN 2GHZ M13
• Manufacturer: CEL

Specifications of NE851M13-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5.5V
• Frequency - Transition: 4.5GHz
• Noise Figure (db Typ @ F): 1.9dB ~ 2.5dB @ 2GHz
• Power - Max: 140mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 1V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: M13
• Dc Collector/base Gain Hfe Min: 100
• Dc Current Gain Hfe Max: 145
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 5.5 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 0.140 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

NONLINEAR MODEL
SCHEMATIC
BJT NONLINEAR MODEL PARAMETERS
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
(1) Gummel-Poon Model
Parameters
RBM
MJE
VAF
CJE
VJE
CJC
VJC
VAR
IKF
ISE
IKR
ISC
IRB
NE
BR
NR
NC
RE
RB
RC
NF
IS
BF
80.4e-15
0.65e-12
137e-18
532e-18
2.4e-12
0.9871
0.9889
0.021
20.4
28.7
1.28
0.45
0.87
0.34
0.52
166
Q1
2.4
2.7
1.7
50
4
1
0
Parameters
Base
XCJC
MJC
MJS
XTB
CJS
VJS
XTF
VTF
PTF
ITF
EG
XTI
FC
TR
TF
KF
AF
L
0.05 nH
BPKG
170e-15
15e-12
1.0e-9
0.25 nH
0.14
0.75
0.55
0.03
1.11
1.65
Q1
0.5
0.1
0
0
2
0
0
3
L
B
0.01 pF
(1)
C
C
0.05 pF
CBPKG
CB
Emitter
Q
1
0.45 nH
L
0.05 nH
L
EPKG
E
ADDITIONAL PARAMETERS
MODEL TEST CONDITIONS
Frequency:
Bias:
Date:
0.25 pF
C
CE
L
0.05 nH
C
Parameters
C
C
L
L
C
C
L
L
L
0.05 pF
CPKG
CEPKG
B
E
BX
CX
EX
CB
CE
CBPKG
CEPKG
0.1 to 5.0 GHz
V
09/2001
CE
= 1 V to 4 V, I
Collector
C
= 1 mA to 40 mA
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
NE851M13
0.01 pF
0.25 pF
0.25 nH
0.45 nH
0.05 pF
0.05 pF
0.05 nH
0.05 nH
0.05 nH
01/27/2003