NE851M13-A CEL, NE851M13-A Datasheet - Page 2

• Manufacturer Part Number: NE851M13-A
• Description: TRANSISTOR NPN 2GHZ M13
• Manufacturer: CEL

Specifications of NE851M13-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5.5V
• Frequency - Transition: 4.5GHz
• Noise Figure (db Typ @ F): 1.9dB ~ 2.5dB @ 2GHz
• Power - Max: 140mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 1V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: M13
• Dc Collector/base Gain Hfe Min: 100
• Dc Current Gain Hfe Max: 145
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 5.5 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 0.140 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
Notes:
1. Operation in excess of any one of these parameters may result
2. With device mounted on 1.08 cm
TYPICAL PERFORMANCE CURVES
SYMBOLS
in permanent damage.
V
V
V
T
P
T
CBO
CEO
EBO
I
STG
C
T 2
J
100
160
140
120
100
80
60
40
20
80
60
40
20
0
0
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CE
TOTAL POWER DISSIPATION vs.
BASE TO EMITTER VOLTAGE
Base to Emitter Voltage, V
COLLECTOR CURRENT vs.
= 2 V
PARAMETERS
Ambient Temperature, T
25
0.2
AMBIENT TEMPERATURE
50
0.4
Mounted on Glass Epoxy PCB
(1.08 cm2 • 1.0mm(t) )
75
2
X 1.0 mm glass epoxy board.
0.6
100
A
BE
UNITS
0.8
mW
(°C)
mA
°C
°C
125
V
V
V
(V)
1
1.0
150
(T
-65 to +150
RATINGS
A
(T
= 25°C)
100
140
150
5.5
1.5
9
A
= 25°C)
ORDERING INFORMATION
PART NUMBER
NE851M13-T3-A
1.0
0.8
0.6
0.4
0.2
REVERSE TRANSFR CAPACITANCE vs.
0
60
50
40
30
20
10
0
COLLECTOR TO BASE VOLTAGE
COLLECTOR TO EMITTER VOLTAGE
Collector to Base Voltage, V
1
Collector to Emitter Voltage, V
QUANTITY
10 k pcs./reel
COLLECTOR CURRENT vs.
1
2
3
2
4
400 A
3
360 A
5
µ
320 A
µ
4
280 A
6
µ
240 A
µ
CB
7
5
µ
I
f = 1 MHz
B
200 A
(V)
= 40 A
CE
160 A
8
120 A
µ
80 A
6
(V)
µ
µ
µ
µ
9
7