NE68030-T1-A CEL, NE68030-T1-A Datasheet - Page 13
![TRANSISTOR NPN 2GHZ SOT-323](/photos/5/26/52615/pkg_sot-323_sml.jpg)
NE68030-T1-A
Manufacturer Part Number
NE68030-T1-A
Description
TRANSISTOR NPN 2GHZ SOT-323
Manufacturer
CEL
Datasheet
1.NE68019-T1-A.pdf
(20 pages)
Specifications of NE68030-T1-A
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
10V
Frequency - Transition
10GHz
Noise Figure (db Typ @ F)
1.5dB ~ 2.9dB @ 1GHz ~ 4GHz
Gain
5.3dB ~ 12.5dB
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 10mA, 6V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Package / Case
SOT-323
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Continuous Collector Current
0.035 A
Power Dissipation
150 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
2SC4228-T1-A
NE68030-ATR
NE68030-ATR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NE68030-T1-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
BJT NONLINEAR MODEL PARAMETERS
NE68019 NONLINEAR MODEL
SCHEMATIC
(1) Gummel-Poon Model
Parameters
RBM
VAR
MJE
CJC
VAF
CJE
VJE
VJC
IKR
ISC
IRB
IKF
ISE
NE
BR
NR
RE
RB
BF
NF
NC
RC
IS
0.358e-12
0.162e-12
3.84e-16
1.0e-14
4.01e-4
Infinity
Infinity
124.9
0.027
1.05
2.17
1.05
17.9
1.02
10.5
0.71
0.79
11.9
0.6
0.5
Q1
1
0
2
Parameters
XCJC
MJC
MJS
XTB
CJS
VJS
XTF
VTF
PTF
ITF
XTI
EG
FC
TF
TR
KF
AF
Base
0.635e-9
8.7e-12
L
0.082
BX
0.64
0.75
19.1
1.11
Q1
0.5
18
0
0
0
0
0
3
0
1
L
B
(1)
C
C
CBPKG
CB
Emitter
L
L
E
EX
C
ADDITIONAL PARAMETERS
UNITS
MODEL RANGE
Frequency:
Bias:
Date:
CE
Parameters
Parameter
time
capacitance
inductance
resistance
voltage
current
C
C
C
L
L
C
C
L
L
L
Q1
B
E
BX
CX
EX
CEPKG
CB
CE
CBPKG
CEPKG
L
CX
0.05 to 3.0 GHz
V
8/03
CE
= 1 V to 6 V, I
Collector
C
0.08e-12
0.08e-12
0.72e-9
0.76e-9
0.17e-12
0.21e-12
0.19e-9
0.19e-9
0.19e-9
seconds
farads
henries
ohms
volts
amps
Units
= 1 mA to 15 mA
68019