NE68030-A CEL, NE68030-A Datasheet

TRANSISTOR NPN 2GHZ SOT-323

NE68030-A

Manufacturer Part Number
NE68030-A
Description
TRANSISTOR NPN 2GHZ SOT-323
Manufacturer
CEL
Datasheet
1.NE68019-T1-A.pdf (20 pages)

Specifications of NE68030-A

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
10V
Frequency - Transition
10GHz
Noise Figure (db Typ @ F)
1.5dB ~ 2.9dB @ 1GHz ~ 4GHz
Gain
5.3dB ~ 12.5dB
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 10mA, 6V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Package / Case
SOT-323
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Continuous Collector Current
0.035 A
Power Dissipation
150 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NE68030-T1-A
NEC's NE680 series of NPN epitaxial silicon transistors is de-
signed for low noise, high gain and low cost applications. Both
the chip and micro-x versions are suitable for applications up
to 6 GHz. The NE680 die is also available in six different low
cost plastic surface mount package styles. The NE680's high
f
to as low as 0.5 V / 0.5 mA. IC max for the NE680 series is
35 mA. For higher current applications see the NE681 se-
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: f
• LOW NOISE FIGURE:
• HIGH ASSOCIATED GAIN:
• EXCELLENT LOW VOLTAGE
DESCRIPTION
T
makes it ideal for low voltage/low current applications, down
1.7 dB at 2 GHz
2.6 dB at 4 GHz
12.5 dB at 2 GHz
LOW CURRENT PERFORMANCE
8.0 dB at 4 GHz
2.5
2.0
1.5
1.0
.5
300
NOISE FIGURE & ASSOCIATED GAIN
500
Frequency, f (GHz)
vs. FREQUENCY
1000
NE68018
6V, 5 mA
3V, 5 mA
2000
3000
FREQUENCY TRANSISTOR
NEC's NPN SILICON HIGH
T
= 10 GHz
15
10
25
20
5
18 (SOT 343 STYLE)
00 (CHIP)
39 (SOT 143 STYLE)
30 (SOT 323
California Eastern Laboratories
19 (3 PIN ULTRA
SUPER MINI MOLD)
35 (MICRO-X)
33 (SOT 23 STYLE)
39R (SOT 143R STYLE)
NE680
SERIES

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NE68030-A Summary of contents

Page 1

... GHz 2 GHz • HIGH ASSOCIATED GAIN: 12 GHz 8 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE DESCRIPTION NEC's NE680 series of NPN epitaxial silicon transistors is de- signed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications GHz ...

Page 2

... GHz mA GHz GHz GHz μ μ mA MHz °C/W °C 25°C) A NE68030 2SC4228 30 UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX = GHz mA GHz dB 1 GHz dB 1 GHz GHz dB 12 GHz dB 9 GHz dB 5 GHz GHz dB 10.9 ...

Page 3

ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Collector to Base Voltage CBO V Collector to Emitter Voltage CEO V Emitter to Base Voltage EBO I Collector Current C T Junction Temperature J T Storage Temperature STG Notes: 1. Operation in excess ...

Page 4

TYPICAL PERFORMANCE CURVES FORWARD CURRENT GAIN vs. COLLECTOR CURRENT 500 300 200 100 Collector Current NE68035 NOISE FIGURE vs. COLLECTOR CURRENT GHz ...

Page 5

... TYPICAL NOISE PARAMETERS FREQ OPT A OPT Γ (MHz) (dB) (dB) MAG 1000 1.2 19.21 0.30 2000 1.7 14.49 0.20 4000 2.6 9.12 0.22 NE68030 TYPICAL NOISE PARAMETERS (T = 25°C) A FREQ. ANG Rn/50 (MHz 2 500 22 0.41 800 44 0.32 54 0.29 1000 76 0.26 1500 2000 130 0. ...

Page 6

TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz 1 0.1 GHz GHz -.2 -.4 -.6 -1.5 -.8 -1 NE68018 V = 2.5 ...

Page 7

TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz 1.5 2 0.1 GHz -. GHz -.4 -.6 -1.5 -.8 -1 NE68019 V = 2.5 V, ...

Page 8

... TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz 0.1 GHz S 11 -.2 5 GHz -.4 -.6 -1.5 -.8 -1 NE68030 FREQUENCY S 11 (MHz) MAG ANG 100 .958 -8.2 400 .907 -31.4 800 .752 -57.5 1000 .672 -68.0 1500 .500 -90.6 2000 .371 -108.7 2500 ...

Page 9

TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz S 11 -.2 5 GHz -.4 -.6 -1.5 -.8 -1 NE68033 ...

Page 10

TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz 1 0.1 GHz -. -.4 5 GHz -.6 -1.5 -.8 -1 NE68035 ...

Page 11

TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz 1 0.1 GHz 6 GHz -.2 -.4 -.6 -1.5 -.8 -1 NE68039 V = ...

Page 12

NE68018 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.84e-16 MJC BF 124.9 XCJC NF 1.05 CJS VAF 11.9 VJS IKF 0.027 MJS ISE 1.0e- 2. XTF NR 1.05 VTF VAR ...

Page 13

NE68019 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.84e-16 MJC BF 124.9 XCJC NF 1.05 CJS VAF 11.9 VJS IKF 0.027 MJS ISE 1.0e- 2. XTF NR 1.05 VTF VAR ...

Page 14

... NE68030 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.84e-16 MJC BF 124.9 XCJC NF 1.05 CJS VAF 11.9 VJS IKF 0.027 MJS ISE 1.0e- 2. XTF NR 1.05 VTF VAR Infinity ITF IKR Infinity PTF ISC 0.6 XTB RB 17.9 XTI RBM 1.02 ...

Page 15

... RBM 1.02 KF IRB 4.01e 10.5 CJE 0.358e-12 VJE 0.71 MJE 0.5 CJC 0.162e-12 VJC 0.79 (1) Gummel-Poon Model Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data. C CBPKG BEPKG L EX Emitter UNITS (1) Parameter ...

Page 16

NE68035 NONLINEAR MODEL SCHEMATIC RB_PKG BASE 0.1 ohms CBEX_PKG 0.1pF BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.84e-16 MJC BF 124.9 XCJC NF 1.05 CJS VAF 11.9 VJS IKF 0.027 MJS ISE 1.0e- 2. ...

Page 17

OUTLINE DIMENSIONS (Units in mm) NE68000 (CHIP) (Chip Thickness: 160 μm) 0.35 0.01 0.13 BASE EMITTER 30 PACKAGE OUTLINE 18 2.1 ± 0.2 1.25 ± 0 2.0 ± 0.2 0.65 0.65 0.60 0. +0.10 0.4 -0.05 ...

Page 18

OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 33 (SOT-23) +0.2 2.8 -0.3 2 2.9 ± 0.2 0.95 1 +0.2 1.5 -0.1 1.1 to 1.4 0 0.1 PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 2 ...

Page 19

... ORDERING INFORMATION PART NUMBER QUANTITY NE68800 100 NE68018-T1-A 3000 1 NE68019-T1-A 3000 1 NE68030-T1-A 3000 1 NE68033-T1B-A 3000 1 NE68035 1 NE68039-T1-A 3000 1 NE68039R-T1 3000 Note: 1. Lead material: Cu Lead plating: SnBi – 2.5%Bi Typ. Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury ...

Page 20

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