BFG540,215 NXP Semiconductors, BFG540,215 Datasheet - Page 10

• Manufacturer Part Number: BFG540,215
• Description: TRANS NPN 15V 9GHZ SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BFG540,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2.4dB @ 900MHz
• Power - Max: 400mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 40mA, 8V
• Current - Collector (ic) (max): 120mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 100
• Dc Current Gain Hfe Max: 60 @ 40mA @ 8V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Dual
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 120 mA
• Power Dissipation: 400 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934018840215; BFG540 T/R; BFG540 T/R

NXP Semiconductors
handbook, full pagewidth
handbook, full pagewidth
NPN 9 GHz wideband transistor
I
I
C
C
= 40 mA; V
= 40 mA; V
CE
CE
= 8 V.
= 8 V; Z
o
= 50 .
Fig.19 Common emitter reverse transmission coefficient (s
180
180
Fig.20 Common emitter output reflection coefficient (s
0.25
0
0.20
135
135
135
135
0.2
0.2
0.2
0.15
0.5
0.5
Rev. 05 - 21 November 2007
0.10
3 GHz
0.5
0.05
90
90
90
90
1
1
1
40 MHz
3 GHz
2
2
2
40 MHz
5
45
45
45
45
5
5
MRA759
MRA758
BFG540; BFG540/X;
22
).
0
0
12
).
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BFG540/XR
10 of 14