NE58219-A CEL, NE58219-A Datasheet - Page 3

• Manufacturer Part Number: NE58219-A
• Description: TRANSISTOR BIPOLAR .9GHZ 3-SMINI
• Manufacturer: CEL

Specifications of NE58219-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 5GHz
• Power - Max: 100mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 5V
• Current - Collector (ic) (max): 60mA
• Mounting Type: Surface Mount
• Package / Case: 1608
• Dc Collector/base Gain Hfe Min: 120
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.06 A
• Power Dissipation: 0.1 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: NE58219-T1-A

TYPICAL CHARACTERISTICS (T
150
100
50
24
16
30
20
10
0
0
8
0
V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
V
CE
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
CE
V
T
0
= 5 V
BE
2
2 .
–
A
COLLECTOR CURRENT vs.
BASE TO EMITTER
C
– Ambient Temperature – °C
– Base to Emitter Voltage – V
o
e l l
50
t c
0.4
r o
4
o t
E
m
t t i
0.6
r e
6
100
V
o
a t l
A
e g
Free Air
= 25
0.8
8
–
20 A
V
°
C)
150
1
0 1
0 .
200
100
10
14
12
10
50
20
10
8
6
4
2
0
8
6
4
2
0
0.5
0.5
0.5
V
f = 1 GHz
CE
V
f = 1 GHz
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
CE
1
= 5 V
1
1
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
= 5 V
NE58219 / 2SC5004
COLLECTOR CURRENT
DC CURRENT GAIN vs.
I
I
I
C
C
C
2
2
2
– Collector Current – mA
– Collector Current – mA
– Collector Current – mA
5
5
5
10
10
10
V
CE
20
20
20
= 5 V
50
50
50
3