NE58219-A CEL, NE58219-A Datasheet - Page 2

• Manufacturer Part Number: NE58219-A
• Description: TRANSISTOR BIPOLAR .9GHZ 3-SMINI
• Manufacturer: CEL

Specifications of NE58219-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 5GHz
• Power - Max: 100mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 5V
• Current - Collector (ic) (max): 60mA
• Mounting Type: Surface Mount
• Package / Case: 1608
• Dc Collector/base Gain Hfe Min: 120
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.06 A
• Power Dissipation: 0.1 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: NE58219-T1-A

ELECTRICAL CHARACTERISTICS (T
*1
*2
h
2
FE
Collector Cutoff Current
Emitter Cutoff Current
Collector Saturation Voltage
D
Gain Bandwidth Product
Feed–back Capacitance
Insertion Power Gain
Marking
C
Rank
Classification
h
Pulse Measurement PW ≤ 350 μ s, Duty Cycle ≤ 2 %
The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.
C
FE
r u
CHARACTERISTIC
e r
t n
G
60 to 120
a
n i
FB
77
SYMBOL
V
|S
CE (sat)
I
I
h
C
CBO
EBO
21
f
FE
T
re
e|
A
2
= 25
MIN.
°
3.0
5
60
C)
0 .
TYP.
5.0
0.9
MAX.
120
0.1
0.1
0.5
1.2
UNIT
GHz
μ A
μ A
d
pF
V
B
NE58219 / 2SC5004
V
V
h
V
V
V
V
FE
CB
EB
CE
CE
CB
CE
= 10, I
= 1 V, I
= 15 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
TEST CONDITION
C
E
C
C
C
E
C
= 5 mA
= 0
= 0
= 5 mA
= 5 mA
= 0, f = 1 MHz
= 5 mA, f = 1 GHz
*1
*2