NE678M04-T2-A CEL, NE678M04-T2-A Datasheet - Page 3

• Manufacturer Part Number: NE678M04-T2-A
• Description: TRANSISTOR NPN 1.8GHZ M04
• Manufacturer: CEL

Specifications of NE678M04-T2-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 6V
• Frequency - Transition: 12GHz
• Noise Figure (db Typ @ F): 1.7dB ~ 2.5dB @ 2GHz
• Gain: 13.5dB
• Power - Max: 205mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 75 @ 30mA, 3V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: M04
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Continuous Collector Current: 0.1 A
• Power Dissipation: 205 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
25
20
15
10
15
10
25
20
15
10
0
5
5
0
5
0
MAG, MSG vs. COLLECTOR CURRENT
1
1
1
V
f = 1 GHz
V
f = 2 GHz
V
f = 2.5 GHz
CE
CE
CE
MAG vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
= 3 V
= 3 V
= 3 V
vs. COLLECTOR CURRENT
INSERTION POWER GAIN,
INSERTION POWER GAIN,
Collector Current I
Collector Current I
Collector Current I
10
10
10
|S
|S
MAG
21e
21e
MSG
|
|
2
2
C
C
C
(mA)
(mA)
(mA)
MAG
100
100
100
(T
A
= 25 °C)
25
20
15
10
35
30
25
20
15
10
0
5
8
6
4
2
0
5
0
0.1
MAG, MSG vs. COLLECTOR CURRENT
1
1
V
f = 2 GHz
V
f = 2 GHz
NOISE FIGURE, ASSOCIATED GAIN
MSG
CE
CE
= 3 V
= 3 V
MAG, MSG vs. FREQUENCY
vs. COLLECTOR CURRENT
INSERTION POWER GAIN,
INSERTION POWER GAIN,
Collector Current I
Collector Current I
MAG
Frequency f (mA)
MSG
10
10
1
|S
|S
G
NF
21e
21e
a
MAG
|
|
2
2
C
C
(mA)
(mA)
V
I
C
CE
= 30 mA
= 3 V
NE678M04
100
100
10
16
12
8
4
0