NE678M04-T2-A CEL, NE678M04-T2-A Datasheet

NE678M04-T2-A

Manufacturer Part Number

NE678M04-T2-A

Description

TRANSISTOR NPN 1.8GHZ M04

Manufacturer

CEL

Datasheet

1.NE678M04-A.pdf (8 pages)

Specifications of NE678M04-T2-A

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (max)

Frequency - Transition

12GHz

Noise Figure (db Typ @ F)

1.7dB ~ 2.5dB @ 2GHz

Gain

13.5dB

Power - Max

205mW

Dc Current Gain (hfe) (min) @ Ic, Vce

75 @ 30mA, 3V

Current - Collector (ic) (max)

100mA

Mounting Type

Surface Mount

Package / Case

M04

Mounting Style

SMD/SMT

Configuration

Single

Transistor Polarity

NPN

Continuous Collector Current

0.1 A

Power Dissipation

205 mW

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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• HIGH GAIN BANDWIDTH:

• HIGH OUTPUT POWER:

• HIGH LINEAR GAIN:

• NEW LOW PROFILE M04 PACKAGE:

ELECTRICAL CHARACTERISTICS

Notes:

1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the

3. Electronic Industrail Association of Japan.

FEATURES

DESCRIPTION

NEC's NE678M04 is fabricated using NEC's HFT3 wafer

process. With a transition frequency of 12 GHz, the NE678M04

is usable in applications from 100 MHz to 3 GHz. The NE678M04

provides P1dB of 18 dBm, even with low voltage and low

current, making this device an excellent choice for the driver

stage for mobile or fixed wireless applications.

The NE678M04 is housed in NEC's new low profile/flat lead

style "M04" package

guard pin of capacitance meter.

MAG =

SOT-343 footprint, with a height of only 0.59 mm

Flat lead style for better RF performance

-1dB

= 12 GHz

= 13 dB at 1.8 GHz

SYMBOLS

SILICON HIGH FREQUENCY TRANSISTOR

= 18 dBm at 1.8 GHz

MAG

Cre

CBO

EBO

21E

1dB

(

K ±

Collector Cutoff Current at V

Emitter Cutoff Current at V

DC Current

Output Power at 1 dB compression point at V

f = 1.8 GHz, P

Linear Gain at V

Maximum Available Gain

Insertion Power Gain at V

Collector Efficiency at V

Noise Figure at V

Gain Bandwidth at V

Reverse Transfer Capacitance

K - 1

= 7 dBm

Gain at V

= 7 dBm

PARAMETERS AND CONDITIONS

EIAJ

= 2.8 V, I

NEC's MEDIUM POWER NPN

= 3 V, I

PACKAGE OUTLINE

REGISTRATION NUMBER

= 3 V, I

PART NUMBER

at V

= 2.8 V, I

= 3 V, I

= 7 mA, f = 2 GHz, Z

= 1 V, I

= 10 mA, f = 1.8 GHz, P

= 5V, I

at V

= 30 mA, f = 2 GHz

= 3 V, I

= 30 mA

= 25°C)

= 30 mA, f = 2 GHz

= 0

= 10 mA, f = 1.8 GHz,

= 3 V, I

= 0

= 30 mA, f = 2 GHz

= 2.8 V, I

= 0, f = 1 MHz

= Z

opt

= -5 dBm

= 10 mA,

California Eastern Laboratories

UNITS

dBm

GHz

PIN CONNECTIONS

1. Emitter

2. Collector

3. Emitter

4. Base

+0.30

MIN

2.05±0.1

1.25±0.1

8.0

NE678M04

2SC5753

M04

TYP

18.0

13.0

13.5

10.5

12.0

0.42

120

1.7

MAX

100

150

2.5

0.7

Related parts for NE678M04-T2-A

NE678M04-T2-A Summary of contents

Page 1

... NEC's NE678M04 is fabricated using NEC's HFT3 wafer process. With a transition frequency of 12 GHz, the NE678M04 is usable in applications from 100 MHz to 3 GHz. The NE678M04 provides P1dB of 18 dBm, even with low voltage and low current, making this device an excellent choice for the driver stage for mobile or fixed wireless applications ...

Page 2

... Collector to Emitter Voltage V 1 ORDERING INFORMATION (T = 25°C) A PART NUMBER UNITS RATINGS NE678M04-T2-A V 9.0 V 6.0 V 2.0 mA 100 THERMAL RESISTANCE mW 205 SYMBOLS 150 °C R -65 to +150 °C Note: 1. Mounted on a 1.08cm ( °C) A 125 150 (º ...

Page 3

... Collector Current I C INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT 2.5 GHz 20 15 MAG 21e Collector Current °C) A 100 MAG 100 (mA) 100 (mA) NE678M04 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY MSG MAG 21e 0.1 Frequency f (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT ...

Page 4

... NE678M04 TYPICAL PERFORMANCE CURVES OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 3 0.9 GHz out (RF OFF η Input Power P (dBm) in OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 2 2 1.8 GHz f = 1.8 GHz (RF OFF (RF OFF out out ...

Page 5

... ∆ ∆ NE678M04 +0º +0º 1 MAG (dB) 29.97 26.71 24.93 23.61 22.62 21.75 21.00 20.32 19.72 19.17 16.81 13.98 13.41 12.93 11.02 9.63 8.62 7.95 7.59 7.69 6.86 6. ...

Page 6

... NE678M04 TYPICAL SCATTERING PARAMETERS j50 j25 j10 S11 100 S22 -j10 -j25 -j50 NE678M04 FREQUENCY S 11 GHz MAG ANG 0.100 0.52 -74.30 0.200 0.55 -114.70 0.300 0.56 -136.33 0.400 0.56 -149.34 0.500 0.56 -158.35 0.600 0.56 -167.02 0.700 0.57 -172.39 0.800 ...

Page 7

... ∆ ∆ Internet: http://WWW.CEL.COM NE678M04 +0º +0º 1 MAG (dB) 35.14 31.73 29.60 27.89 26.43 25.20 24.08 22.69 21.26 20.18 16.43 14.89 14.44 14.02 12.29 10.96 9.97 9.29 9.02 8.67 7.95 7. ...

Page 8

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

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