NE662M04-T2-A CEL, NE662M04-T2-A Datasheet - Page 4

• Manufacturer Part Number: NE662M04-T2-A
• Description: TRANSISTOR NPN 2GHZ M04
• Manufacturer: CEL

Specifications of NE662M04-T2-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3.3V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 1.5dB @ 2GHz
• Gain: 20dB
• Power - Max: 115mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 5mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: M04
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Continuous Collector Current: 0.035 A
• Power Dissipation: 115 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
250
200
150
100
25
20
15
10
50
50
40
30
20
10
5
0
0
0
1
1
TOTAL POWER DISSIPATION vs.
Mounted on a Ceramic Substrate
Free Air
BASE TO EMITTER VOLTAGE
Base to Emitter Voltage, V
Ambient Temperature, T
200
COLLECTOR CURRENT vs.
25
V
5
AMBIENT TEMPERATURE
CE
COLLECTOR CURRENT
Collector Current, I
GAIN BANDWIDTH vs.
= 2 V
V
CE
400
10
50
= 2 V
600
20
75
V
CE
100
800
25
C
Infinite Heatsink
= 1 V
(mA)
A
BE
(°C)
1000
125
30
(V)
1200
(T
150
35
A
= 25˚C)
0.50
0.40
0.30
0.20
0.10
120
110
100
90
80
70
60
50
40
30
20
30
20
10
0
0
.1
0
COLLECTOR TO EMITTER VOLTAGE
COLLECTOR TO EMITTER VOLTAGE
Collector to Emitter Voltage, V
Collector to Emitter Voltage, V
FEEDBACK CAPACITANCE vs.
V
1
COLLECTOR CURRENT vs.
CE
1.0
COLLECTOR CURRENT
Collector Current, l
DC CURRENT GAIN vs.
= 2 V
1.0
2
2.0
3
2.0
3.0
5
C
7
(mA)
Freq. = 1 MHz
10
4.0
IB = 5 µA
CE
CE
255 µA
355 µA
305 µA
205 µA
155 µA
105 µA
3.0
55 µA
(V)
(V)
NE662M04
20 30
3.5
5.0