NE662M04-A CEL, NE662M04-A Datasheet

NE662M04-A

Manufacturer Part Number

NE662M04-A

Description

TRANSISTOR NPN 2GHZ M04

Manufacturer

CEL

Datasheet

1.NE662M04-A.pdf (11 pages)

Specifications of NE662M04-A

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (max)

3.3V

Frequency - Transition

25GHz

Noise Figure (db Typ @ F)

1.1dB ~ 1.5dB @ 2GHz

Gain

20dB

Power - Max

115mW

Dc Current Gain (hfe) (min) @ Ic, Vce

50 @ 5mA, 2V

Current - Collector (ic) (max)

35mA

Mounting Type

Surface Mount

Package / Case

M04

Dc Collector/base Gain Hfe Min

Mounting Style

SMD/SMT

Configuration

Single

Transistor Polarity

NPN

Maximum Operating Frequency

25 GHz

Collector- Emitter Voltage Vceo Max

3.3 V

Emitter- Base Voltage Vebo

1.5 V

Continuous Collector Current

0.035 A

Power Dissipation

0.115 W

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

NE662M04-T2-A

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• HIGH GAIN BANDWIDTH: f

• LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz

• HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz

• NEW LOW PROFILE M04 PACKAGE:

DESCRIPTION

FEATURES

NEC's NE662M04 is fabricated using NEC's UHS0 25 GHz f

NE662M04 is usable in applications from 100 MHz to 10 GHz. The NE662M04 provides excellent low voltage/low current

performance.

NEC's new low profile/flat lead style "M04" package is ideal for today's portable wireless applications. The NE662M04 is an ideal choice

for LNA and oscillator requirements in all mobile communication systems.

ELECTRICAL CHARACTERISTICS

Date Published: June 22, 2005

Notes:

• SOT-343 footprint, with a height of just 0.59 mm

• Flat Lead Style for better RF performance

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.

4. MAG =

5. MSG = S

SYMBOLS

MAG

MSG

Cre

CBO

EBO

21E

1dB

The information in this document is subject to change without notice. Before using this document, please confirm

that this is the latest version.

(

Collector Cutoff Current at V

Emitter Cutoff Current at V

Forward Current Gain

Gain Bandwidth at V

Maximum Available Power Gain

Maximum Stable Gain

Insertion Power Gain at V

Noise Figure at V

Output Power at 1 dB compression point at

Third Order Intercept Point at V

Feedback Capacitance

K-

= 2 V, I

-1)

)

= 25 GHz

= 20 mA, f = 2 GHz

PARAMETERS AND CONDITIONS

EIAJ

= 2 V, I

PACKAGE OUTLINE

FREQUENCY TRANSISTOR

at V

REGISTERED NUMBER

= 3 V, I

at V

PART NUMBER

at V

= 2 V, I

= 5 mA, f = 2 GHz, Z

= 1 V, I

NPN SILICON HIGH

= 25°C)

= 2 V, I

= 5V, I

= 2 V, I

= 30 mA, f = 2 GHz

at V

= 2 V, I

= 20 mA, f = 2 GHz

= 0

= 5 mA

= 0

= 20 mA, f = 2 GHz

= 2 V, I

= 0, f = 1 MHz

= 20 mA, f = 2 GHz

wafer process. With a typical transition frequency of 25 GHz the

= 20 mA, f = 2 GHz

= Z

OPT

M04

NPN SILICON RF TRANSISTOR

UNITS

GHz

dBm

NE662M04

MIN

NE662M04

2SC5508

M04

TYP

0.18

1.1

MAX

0.24

200

100

1.5

Related parts for NE662M04-A

NE662M04-A Summary of contents

Page 1

... NE662M04 is usable in applications from 100 MHz to 10 GHz. The NE662M04 provides excellent low voltage/low current performance. NEC's new low profile/flat lead style "M04" package is ideal for today's portable wireless applications. The NE662M04 is an ideal choice for LNA and oscillator requirements in all mobile communication systems. ...

Page 2

... C = -5.0 0.8 0.9 -2.0 1.0 1.5 1.8 1.9 2.0 2.5 2.0 5.0 THERMAL RESISTANCE 0 Junction to Case Resistance -5.0 Junction to Ambient Resistance -2.0 NE662M04 (T = 25˚ Γ Γ Γ Γ Γ MIN A OPT (dB) (dB) MAG ANG 3 mA 0.78 21.4 0.26 31.7 0.80 20 ...

Page 3

... V CE 25.0 5.00 20.0 4.00 15.0 3.00 10.0 2.00 5.0 1.00 0.0 0.00 100 NE662M04 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY 2V Frequency, f (GHz) NOISE FIGURE AND ASSOCIATED GAIN vs. COLLECTOR CURRENT 30 ...

Page 4

... BE NE662M04 DC CURRENT GAIN vs. COLLECTOR CURRENT Collector Current, l (mA) C COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 355 µA 305 µA 255 µA 205 µA 155 µA 105 µ µ µA ...

Page 5

... GAIN vs. COLLECTOR CURRENT 30. GHz 25.00 MSG 20. 15.00 10.00 5.00 0. Collector Current 25˚ MAG 10 MAG 100 (mA) NE662M04 FORWARD INSERTION GAIN AND MAXIMUM AVAILABLE GAIN vs. FREQUENCY MSG MAG Frequency, f (GHz) MAXIMUM STABLE GAIN, INSERTION POWER GAIN, MAXIMUM AVAILABLE GAIN vs. COLLECTOR CURRENT 30. GHz 25.00 MAG 20 ...

Page 6

... PIN CONNECTIONS 1. Emitter 2. Collector 3. Emitter 4. Base ORDERING INFORMATION (Solder Contains Lead) PART NUMBER QUANTITY NE662M04-T2 3000 ORDERING INFORMATION (Pb-Free) PART NUMBER QUANTITY NE662M04-T2-A 3000 0.65 1.30 0.65 +0.1 0.11 -0.08 PACKAGING Tape & Reel PACKAGING Tape & Reel NE662M04 ...

Page 7

... NE662M04 90˚ 120˚ 60˚ 150˚ 30˚ 0.1 GHz S 12 0˚ GHz 21 18 GHz S 21 -150˚ -30˚ 0.1 GHz -120˚ ...

Page 8

... NE662M04 90˚ 120˚ 60˚ 150˚ S 30˚ GHz 0˚ 0.1 GHz 0.1 GHz GHz -150˚ -30˚ -120˚ ...

Page 9

... NE662M04 90˚ 120˚ 60˚ GHz 150˚ 30˚ 0˚ 0.1 GHz 0.1 GHz GHz -150˚ -30˚ -120˚ ...

Page 10

... NE662M04 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 1.6e-16 MJC BF 111 XCJC NF 1.02 CJS VAF 23 VJS IKF 0.38 MJS ISE 1e XTF NR 1.02 VTF VAR 2.5 ITF IKR 0.1 PTF ISC 3e- 1. 0.77 XTB RB 3.5 XTI RBM 20 KF IRB 1 ...

Page 11

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

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