BFQ19,115 NXP Semiconductors, BFQ19,115 Datasheet - Page 4

• Manufacturer Part Number: BFQ19,115
• Description: TRANS NPN 15V 5.5GHZ SOT89
• Manufacturer: NXP Semiconductors

Specifications of BFQ19,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Mounting Type: Surface Mount
• Power - Max: 1W
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Transistor Type: NPN
• Frequency - Transition: 5.5GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 70mA, 10V
• Noise Figure (db Typ @ F): 3.3dB @ 500MHz
• Dc Current Gain Hfe Max: 25 @ 70mA @ 10V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5500 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3.3 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933330380115::BFQ19 T/R::BFQ19 T/R

NXP Semiconductors
handbook, halfpage
handbook, halfpage
NPN 5 GHz wideband transistor
(GHz)
V
Fig.2
V
Fig.4
h FE
CE
CE
T f
120
= 10 V; T
= 10 V; f = 500 MHz; T
80
40
4
0
8
6
2
0
0
0
DC current gain as a function of collector
current.
Transition frequency as a function of
collector current.
j
= 25 C.
40
40
j
= 25 C.
80
80
I
I
C
C
(mA)
(mA)
MBB774
MBB773
Rev. 03 - 28 September 2007
120
120
handbook, halfpage
I
Fig.3
E
(pF)
= i
C c
e
5
4
3
2
1
0
= 0; f = 1 MHz; T
0
Collector capacitance as a function of
collector-base voltage.
5
j
= 25 C.
10
Product specification
15
V CB (V)
MBB830
BFQ19
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