NE851M03-T1-A CEL, NE851M03-T1-A Datasheet - Page 5

• Manufacturer Part Number: NE851M03-T1-A
• Description: TRANSISTOR NPN 2GHZ SOT-363
• Manufacturer: CEL

Specifications of NE851M03-T1-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5.5V
• Frequency - Transition: 4.5GHz
• Noise Figure (db Typ @ F): 1.9dB ~ 2.5dB @ 2GHz
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 1V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Dc Collector/base Gain Hfe Min: 145
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Continuous Collector Current: 0.1 A
• Power Dissipation: 0.2 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 2SC5800-T1-A

TYPICAL PERFORMANCE CURVES
-10
-15
25
20
15
10
-5
4
3
2
1
0
4
3
2
1
0
5
0
NOISE FIGURE and ASSOCIATED GAIN
-20
NOISE FIGURE and ASSOCIATED GAIN
1
1
V
I
V
f = 2 GHz
V
f = 1 GHz
Cq
CE
CE
CE
= 5 mA (RF OFF)
= 2 V, f = 1 GHz
= 1 V
COLLECTOR CURRENT vs.
vs. COLLECTOR CURRENT
= 1 V
vs. COLLECTOR CURRENT
-15
Collector Current, I
Collector Current, I
OUTPUT POWER AND
Input Power, P
INPUT POWER
-10
P
out
10
10
-5
G
NF
G
NF
IN
a
a
I
C
(dBm)
C
C
0
(mA)
(mA)
5
100
100
10
18
12
8
4
0
16
12
8
4
0
80
70
60
50
40
30
20
10
0
(T
A
= 25°C)
-10
-15
25
20
15
10
-5
5
0
4
3
2
1
0
4
3
2
1
0
-20
NOISE FIGURE and ASSOCIATED GAIN
1
1
NOISE FIGURE and ASSOCIATED GAIN
V
I
V
f = 1 GHz
V
f = 2 GHz
Cq
CE
CE
CE
= 5 mA (RF OFF)
= 2 V, f = 2 GHz
= 2 V
= 2 V
-15
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
COLLECTOR CURRENT vs.
Collector Current, I
OUTPUT POWER AND
Collector Current, I
Input Power, P
-10
INPUT POWER
P
out
10
10
-5
G
NF
NF
G
a
a
IN
I
C
0
(dBm)
C
C
(mA)
(mA)
5
100
100
10
16
12
8
4
0
18
12
8
4
0
80
70
60
50
40
30
20
10
0