NE851M03-T1-A CEL, NE851M03-T1-A Datasheet

NE851M03-T1-A

Manufacturer Part Number

NE851M03-T1-A

Description

TRANSISTOR NPN 2GHZ SOT-363

Manufacturer

CEL

Datasheet

1.NE851M03-T1-A.pdf (10 pages)

Specifications of NE851M03-T1-A

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (max)

5.5V

Frequency - Transition

4.5GHz

Noise Figure (db Typ @ F)

1.9dB ~ 2.5dB @ 2GHz

Power - Max

200mW

Dc Current Gain (hfe) (min) @ Ic, Vce

100 @ 5mA, 1V

Current - Collector (ic) (max)

100mA

Mounting Type

Surface Mount

Package / Case

SC-70-6, SC-88, SOT-363

Dc Collector/base Gain Hfe Min

145

Mounting Style

SMD/SMT

Configuration

Single

Transistor Polarity

NPN

Continuous Collector Current

0.1 A

Power Dissipation

0.2 W

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gain

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

2SC5800-T1-A

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

NE851M03-T1-A

Manufacturer:

RENESAS/瑞萨

Quantity:

20 000

Current page: 1 of 10
Download datasheet (471Kb)

DESCRIPTION

NEC's NE851M03 transistor is designed for oscillator appli-

cations up to 3 GHz. The NE851M03 features low voltage

operation, low phase noise, and high immunty to pushing ef-

fects. NEC's low proﬁle/ﬂat lead style "M03" package is ideal

for today's portable wireless applications.

ELECTRICAL CHARACTERISTICS

FEATURES

Notes:

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.

3. Collector to base capacitance when the emitter is grounded

• NEW MINIATURE M03 PACKAGE:

• IDEAL FOR ≤ 3 GHz OSCILLATORS

• LOW 1/f NOISE

• LOW PUSHING FACTOR

SYMBOLS

– Small transistor outline

– Low proﬁle / 0.59 mm package height

– Flat lead style for better RF performance

CBO

EBO

21E

Gain Bandwidth at V

Gain Bandwidth

Insertion Power Gain at V

Insertion Power Gain

Noise Figure at V

Reverse Transfer Capacitance

Collector Cutoff Current at V

Emitter Cutoff Current at V

DC Current Gain

NEC's NPN SILICON TRANSISTOR

at V

PARAMETERS AND CONDITIONS

= 1 V, I

EIAJ

at V

= 1 V, I

PACKAGE OUTLINE

REGISTERED NUMBER

PART NUMBER

= 1 V, I

= 10 mA, f = 2 GHz, Zs = Z

= 1 V, I

= 5 V, I

at V

= 5 mA, f = 2 GHz

= 15 mA, f = 2 GHz

= 5 mA

= 5 mA, f = 2 GHz

= 15 mA, f = 2 GHz

= 25°C)

= 0

= 0.5 V, I

= 0

= 0 mA, f = 1 MHz

opt

OUTLINE DIMENSIONS

1.4 ±0.1

California Eastern Laboratories

(0.9)

0.59±0.05

UNITS

0.45

GHz

PACKAGE OUTLINE M03

0.2

+0.1

-0

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

1.2±0.05

0.8±0.1

MIN

100

3.0

5.0

3.0

4.5

–

NE851M03

(Units in mm)

NE851M03

2SC5800

M03

TYP

120

4.5

6.5

4.0

5.5

1.9

0.6

–

0.15

0.3

-0.05

+0.1

-0

MAX

600

145

2.5

0.8

–

Related parts for NE851M03-T1-A

NE851M03-T1-A Summary of contents

Page 1

... LOW PUSHING FACTOR DESCRIPTION NEC's NE851M03 transistor is designed for oscillator appli- cations GHz. The NE851M03 features low voltage operation, low phase noise, and high immunty to pushing ef- fects. NEC's low proﬁle/ﬂat lead style "M03" package is ideal for today's portable wireless applications. ...

Page 2

... COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 0.2 0.4 0.6 Base to Emitter Voltage ORDERING INFORMATION (T = 25°C) A UNITS RATINGS PART NUMBER V 9.0 NE851M03-T1-A V 5.5 V 1.5 mA 100 mW 200 °C 150 °C -65 to +150 (T = 25°C) A 125 150 (°C) A 0.8 1.0 (V) BE QUANTITY 3 k pcs./reel REVERSE TRANSFR CAPACITANCE vs ...

Page 3

TYPICAL PERFORMANCE CURVES GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GHz Collector Current INSERTION POWER GAIN vs. FREQUENCY ...

Page 4

TYPICAL PERFORMANCE CURVES INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 MSG MAG 21e Collector Current INSERTION POWER GAIN and MAG vs. COLLECTOR CURRENT ...

Page 5

TYPICAL PERFORMANCE CURVES NOISE FIGURE and ASSOCIATED GAIN vs. COLLECTOR CURRENT GHz Collector Current NOISE FIGURE and ASSOCIATED GAIN vs. ...

Page 6

... TYPICAL SCATTERING PARAMETERS j50 j100 j25 j10 100 -j10 -j100 -j25 -j50 0.100 to 6.000 GHz by 0.100 NE851M03 FREQUENCY S 11 GHz MAG ANG 0.100 0.824 -46.13 0.200 0.748 -80.11 0.300 0.705 -104.73 0.400 0.679 -121.76 0.500 0.673 -141.72 0.700 0.666 -155.88 1.000 ...

Page 7

... TYPICAL SCATTERING PARAMETERS j50 j25 j10 100 -j10 -j25 -j50 0.100 to 6.000 GHz b y 0.100 NE851M03 FREQUENCY S 11 GHz MAG ANG 0.100 0.695 -61.64 0.200 0.624 -100.58 0.300 0.595 -123.61 0.400 0.582 -137.95 0.500 0.609 -154.61 0.700 0.608 -165.54 1.000 0.608 -175 ...

Page 8

... TYPICAL SCATTERING PARAMETERS j50 j25 j10 100 -j10 -j25 -j50 0.100 to 6.000 GHz b y 0.100 NE851M03 FREQUENCY S 11 GHz MAG ANG 0.100 0.555 -83.93 0.200 0.525 -123.08 0.300 0.519 -141.74 0.400 0.518 -152.59 0.500 0.570 -165.20 0.700 0.572 -173.28 1.000 0.573 179 ...

Page 9

... The appropriate values for the 1/f noise parameters (AF and KF) 20 shall be chosen from the table below, according to the desired 0 current range. 1. For a better understanding on AF and KF parameters, please refer to AN1026. MODEL TEST CONDITIONS Frequency: Bias: Date: 3-238 Collecto r NE851M03 0.04 pF 0.28 pF 0.004 nH 0.004 nH 0.15 pF 0.08 pF 0.005 pF 0.6 nH 0 1.40 2 ...

Page 10

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

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