AT-32063-BLKG Avago Technologies US Inc., AT-32063-BLKG Datasheet - Page 2

• Manufacturer Part Number: AT-32063-BLKG
• Description: TRANS NPN BIPO 5.5V 32MA SOT-363
• Manufacturer: Avago Technologies US Inc.

Specifications of AT-32063-BLKG

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 5.5V
• Noise Figure (db Typ @ F): 1.1dB ~ 1.4dB @ 900MHz
• Gain: 12.5dB ~ 14.5dB
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 5mA, 2.7V
• Current - Collector (ic) (max): 32mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 5.5V
• Transition Frequency Typ Ft: 10GHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: 32mA
• Dc Current Gain Hfe: 50
• No. Of Pins: 6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Electrical Specifications, T
AT-32063 Absolute Maximum Ratings
Notes:
1. All data is per individual transistor.
2. Test circuit, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.2 dB; output loss = 0.3 dB.
Figure 1. Test circuit for Noise Figure and Associated Gain.
This circuit is a compromise match between best noise figure, best gain,
stability, and a practical synthesizable match.
2
TEST CIRCUIT
BOARD MATERIAL = 0.047 GETEK (e = 4.3)
DIMENSIONS IN MILS
NOT TO SCALE
Symbol
50
NF
G
h
I
I
Symbol
CBO
EBO
FE
A
V
V
V
T
P
T
CBO
CEO
I
EBO
STG
C
T
j
W = 10
L = 450
Noise Figure; V
Associated Gain; V
Forward Current Transfer Ratio; V
Collector Cutoff Current; V
Noise Figure; V
Parameters and Test Conditions
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
CE
EB
A
= 1 V
= 2.7 V, I
= 25°C
CE
= 2.7 V, I
[2,3]
C
= 5 mA
CB
= 3 V
[1]
C
= 5 mA
CE
= 2.7 V, I
W = 20
L = 60
Units
mW
mA
C
°C
°C
= 5 mA
V
V
V
W = 10
L = 100
-65 to 150
Maximum
Absolute
150
150
1.5
5.5
11
32
50
f = 0.9 GHz
f = 0.9 GHz
Notes:
1. Permanent damage may occur if any
2. T
3. Derate at 2.7 mW/°C for T
4. 150 mW per device.
of these limits are exceeded.
Mounting Surface
Units
µA
µA
dB
dB
—
Thermal Resistance
θ
jc
= 25°C.
= 370°C/W
12.5
Min.
50
[2]
14.5
1.1
Typ.
C
> 94.5°C.
[2]
[2]
[2]
:
1.4
Max.
270
0.2
1.5
[2]