BFQ540,115 NXP Semiconductors, BFQ540,115 Datasheet - Page 3

• Manufacturer Part Number: BFQ540,115
• Description: TRANS NPN 12V 9GHZ SOT89
• Manufacturer: NXP Semiconductors

Specifications of BFQ540,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Mounting Type: Surface Mount
• Power - Max: 1.2W
• Current - Collector (ic) (max): 120mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Transistor Type: NPN
• Frequency - Transition: 9GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 40mA, 8V
• Noise Figure (db Typ @ F): 1.9dB ~ 2.4dB @ 900MHz
• Dc Current Gain Hfe Max: 100
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.12 A
• Power Dissipation: 1200 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934038980115::BFQ540 T/R::BFQ540 T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
V
V
V
I
P
T
T
R
SYMBOL
SYMBOL
C
stg
j
CBO
CES
EBO
tot
NPN wideband transistor
th j-s
V
P tot
(W)
CE
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
9 V.
0
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
thermal resistance from junction
to soldering point
Fig.2 Power derating curve.
50
PARAMETER
PARAMETER
100
150
T j (
MBG241
o
C)
Rev. 04 - 25 September 2007
200
open emitter
R
open collector
T
T
s
s
BE
= 0
60 C
60 C; P
tot
handbook, halfpage
CONDITIONS
CONDITIONS
= 1.2 W
(mA)
I C
10
10
10
3
2
1
Fig.3 SOAR.
10
MIN.
65
VALUE
V CE (V)
Product specification
95
20
15
2
120
1.2
+150
175
MAX.
BFQ540
MBG244
10
3 of 8
UNIT
K/W
2
V
V
V
mA
W
UNIT
C
C