NE856M03-T1-A CEL, NE856M03-T1-A Datasheet - Page 3

• Manufacturer Part Number: NE856M03-T1-A
• Description: TRANSISTOR NPN 1GHZ SC-90
• Manufacturer: CEL

Specifications of NE856M03-T1-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 4.5GHz
• Noise Figure (db Typ @ F): 1.4dB ~ 2.5dB @ 1GHz
• Power - Max: 125mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 7mA, 3V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: 3-XSOF, MiniMold
• Dc Collector/base Gain Hfe Min: 145
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Continuous Collector Current: 0.1 A
• Power Dissipation: 125 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
Note:
1. Operation in excess of any one of these parameters may result
TYPICAL PERFORMANCE CURVES
SYMBOLS
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected
to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify
CEL for all damages resulting from such improper use or sale.
in permanent damage.
V
V
V
T
P
CBO
CEO
T
EBO
I
STG
C
T
J
-80
-40
-70
-60
-50
-30
100
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • [phone] • Telex 34-6393 • FAX [phone]
DATA SUBJECT TO CHANGE WITHOUT NOTICE
80
60
40
20
0
DISTORTION vs. COLLECTOR CURRENT
20
COLLECTOR TO EMITTER VOLTAGE
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Collector to Emitter Voltage, V
NE856M03 INTERMODULATION
COLLECTOR CURRENT vs.
PARAMETERS
EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
2
Collector Current, I
30
V
V
R
IM
IM
CE
O
G
4
2
3
= 100 dBµV/50 Ω
= R
= 10 V
f = 90 + 100 MHz
f = 2
40
L
= 50 Ω
X
200-190 MHz
6
50
C
8
(mA)
UNITS
60
mW
mA
°C
°C
CE
V
V
V
10
IM
IM
(V)
2
3
1
70
12
(T
-65 to +150
RATINGS
A
(T
= 25°C)
100
125
150
20
12
3
A
= 25°C)
ORDERING INFORMATION
PART NUMBER
NE856M03-A
NE856M03-T1-A
500
300
200
100
50
10
70
30
20
1
V
CE
FORWARD CURRENT GAIN vs.
= 10 V
COLLECTOR CURRENT
2
Collector Current, I
3
QUANTITY
5
7
10
Internet: http://WWW.CEL.COM
C
(mA)
20
30
50
06/10/2002